Infineon BAS28, BAS28W Schematic [ru]
Silicon Switching Diode
For high-speed switching applications
Electrical insulated diodes
BAS28/W
34
D2
D1
1
2
BAS28...
Type Package Configuration Marking
BAS28
BAS28W
SOT143
SOT343
parallel pair
parallel pair
JTs
JTs
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Diode reverse voltage V
Peak reverse voltage V
Forward current I
Surge forward current, t = 1 µs I
Total power dissipation
BAS28, T
BAS28W, T
31°C
S
103°C
S
Junction temperature T
Storage temperature T
Symbol Value Unit
80 V
85
200 mA
4.5 A
mW
P
R
RM
F
FS
tot
330
250
j
stg
150 °C
-55 ... 150
Thermal Resistance
Parameter
Junction - soldering point1)
BAS28
BAS28W
1
For calculation of R
please refer to Application Note Thermal Resistance
thJA
Symbol Value Unit
R
thJS
1
360
190
Feb-21-2003
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
BAS28...
Parameter
DC Characteristics
Breakdown voltage
I
= 100 µA
(BR)
Reverse current
V
= 75 V
R
V
= 25 V, TA = 150 °C
R
V
= 75 V, TA = 150 °C
R
Forward voltage
I
= 1 mA
F
I
= 10 mA
F
I
= 50 mA
F
I
= 100 mA
F
I
= 150 mA
F
Symbol Values Unit
min. typ. max.
V
I
R
V
(BR)
F
85 - - V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.1
30
50
715
855
1000
1200
1250
µA
mV
AC Characteristics
Diode capacitance
V
= 0 V, f = 1 MHz
R
Reverse recovery time
I
= 10 mA, IR = 10 mA, measured at IR = 1mA ,
F
R
= 100
L
C
t
T
rr
- - 2 pF
- - 4 ns
Test circuit for reverse recovery time
D.U.T.
Ι
F
Oscillograph
EHN00019
Pulse generator: tp = 100ns, D = 0.05,
t
r
Oscillograph: R = 50, tr = 0.35ns,
C
1pF
= 0.6ns, Ri = 50
2
Feb-21-2003
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