
Silicon Switching Diode
• For high-speed switching applications
• High breakdown voltage
BAS21UBAS21-03WBAS21
!
BAS21...
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#$
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, , !
!
Type Package Configuration Marking
BAS21
BAS21-03W
BAS21U
SOT23
SOD323
SC74
single
single
parallel triple
JSs
D
JSs
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Diode reverse voltage V
Peak reverse voltage V
Forward current I
Peak forward current I
Surge forward current, t = 10 µs I
Total power dissipation
BAS21, T
BAS21-03W, T
BAS21U, T
≤ 70°C
S
S
≤ 122°C
S
≤ 124°C
Symbol Value Unit
200 V
250
250 mA
625
4 A
mW
F
FM
FS
P
R
RM
tot
350
250
250
Junction temperature T
Storage temperature T
j
st
1
150 °C
-65 ... 150
2005-09-13

Thermal Resistance
BAS21...
Parameter
Junction - soldering point1)
Symbol Value Unit
R
thJS
BAS21
BAS21-03W
BAS21U
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
DC Characteristics
Breakdown voltage
I
= 100 µA
(BR)
Reverse current
V
= 200 V
R
= 200 V, TA = 150 °C
V
R
Forward voltage
I
= 100 mA
F
I
= 200 mA
F
V
I
V
R
(BR)
F
250 - - V
-
-
-
-
≤ 230
≤ 105
≤ 110
-
-
-
-
0.1
100
1
1.25
K/W
µA
V
AC Characteristics
Diode capacitance
V
= 0 V, f = 1 MHz
R
Reverse recovery time
I
= 30 mA, IR = 30 mA, measured at IR = 3mA,
F
R
= 100 Ω
L
C
t
T
rr
Test circuit for reverse recovery time
D.U.T.
Puls generator: tp = 1µs, D = 0.05
t
Oscillograph
Oscillograph: R = 50Ω , t
EHN00018
1
For calculation of R
Ι
F
please refer to Application Note Thermal Resistance
thJA
- - 5 pF
- - 50 ns
= 0.6ns, Ri = 50Ω
r
= 0.35ns, C ≤ 1pF
r
2
2005-09-13

BAS21...
Reverse current IR = ƒ (TA)
V
= 200V
R
BAS 19...21 EHB00027
2
10
A
µ
Ι
R
1
10
5
0
10
5
-1
10
5
-2
10
0 50 100 150
max
typ.
˚C
Forward Voltage VF = ƒ (TA)
I
= Parameter
F
BAS 19...21 EHB00029
1.5
V
V
F
1.0
0.5
0.0
0
50 100 150
Ι
= 625 mA
F
100
10 mA
mA250
mA
˚C
Forward current IF = ƒ (VF)
800
mA
Ι
F
700
600
500
400
300
200
100
T
A
T
A
Forward current IF = ƒ (TS)
BAS21-03W
EHB00028BAS 19...21
300
mA
200
F
I
150
100
50
0
0.0
0.5 1.0 V 1.5
V
F
3
0
0 15 30 45 60 75 90 105 120
2005-09-13
°C
150
T
S

BAS21...
Forward current IF = ƒ (TS)
BAS21U
250
mA
F
I
150
100
50
0
0 15 30 45 60 75 90 105 120
Permissible Puls Load R
thJS
= ƒ (tp)
BAS21
3
10
2
10
thJS
R
1
10
0
10
-1
10
°C
150
T
S
10
-6
10
-5
10
-4
10
-3
10
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
-2
s
t
0
10
P
Permissible Pulse Load
I
Fmax
/ I
FDC
= ƒ (tp)
BAS21
2
10
FDC
/I
Fmax
I
1
10
0
10
-6
10
10
-5
10
-4
10
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
-3
10
Permissible Puls Load R
thJS
= ƒ (tp)
BAS21-03W
3
10
K/W
2
10
thJS
R
10
-3
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
10
-2
s
t
0
10
P
1
10
0
10
-1
-2
s
t
0
10
P
10
10
-6
10
-5
10
-4
4
2005-09-13

Package Outline
Foot Print
Pin 1
marking
±0.2
2.9
(2.25)
1.9
Package SC74
B
(0.35)
546
321
+0.1
0.35
-0.05
0.95
0.2
M
0.5
BAS21...
1.1 MAX.
+0.1
0.15
-0.06
±0.1
±0.1
2.5
0.25
6x
B
10˚ MAX.
0.1 MAX.
M
A0.2
±0.1
1.6
10˚ MAX.
A
Marking Layout
Laser
marking
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
1.9
0.95
Manufacturer
Date code (Year/Month)
Type code
2.9
Pin 1
marking
2005, June
BCW66H
Example
Pin 1
marking
4
3.15
0.2
8
2.7
1.15
6
2005-09-13

Package Outline
Foot Print
Package SOD323
+0.2
1.25
-0.1
2
1
0.3
+0.1
-0.05
M
A
Cathode
marking
±0.2
2.5
0.25
0
±0.05
±0.15
0.45
0.9
+0.2
-0.1
0.15
+0.2
0.3
+0.1
-0.06
A
-0.1
1.7
+0.05
-0.2
BAS21...
Marking Layout
Standard Packing
Type code
Laser marking
0.80.8
1.7
0.6
BAR63-03W
Cathode marking
Example
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
Cathode
marking
4
8
2
2.9
0.65
0.2
1
1.35
7
2005-09-13

Package Outline
Foot Print
Package SOT23
±0.1
2.9
12
1)
+0.1
0.4
-0.05
1.9
0.25MBC
1) Lead width can be 0.6 max. in dambar area
B
3
C
0.95
0.8
0.15 MIN.
±0.15
2.4
0.2
±0.1
1
0.1 MAX.
10˚ MAX.
0.08...0.15
0...8˚
M
A
±0.1
1.3
10˚ MAX.
A
BAS21...
Marking Layout
12
Pin 1
s
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.8 1.2
Manufacturer
Date code (Year/Month)
Type code
4
0.9
0.9 0.91.3
EH
Example
0.2
s
2003, July
37
BCW66
Pin 1
3.15
2.13
8
2.65
8
1.15
2005-09-13

BAS21...
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München
© Infineon Technologies AG 2005.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be
considered as a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of
non-infringement, regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.Infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon
Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body, or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
9
2005-09-13