Silicon Switching Diode
• For high-speed switching applications
• High breakdown voltage
BAS21UBAS21-03WBAS21
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BAS21...
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Type Package Configuration Marking
BAS21
BAS21-03W
BAS21U
SOT23
SOD323
SC74
single
single
parallel triple
JSs
D
JSs
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Diode reverse voltage V
Peak reverse voltage V
Forward current I
Peak forward current I
Surge forward current, t = 10 µs I
Total power dissipation
BAS21, T
BAS21-03W, T
BAS21U, T
≤ 70°C
S
S
≤ 122°C
S
≤ 124°C
Symbol Value Unit
200 V
250
250 mA
625
4 A
mW
F
FM
FS
P
R
RM
tot
350
250
250
Junction temperature T
Storage temperature T
j
st
1
150 °C
-65 ... 150
2005-09-13
Thermal Resistance
BAS21...
Parameter
Junction - soldering point1)
Symbol Value Unit
R
thJS
BAS21
BAS21-03W
BAS21U
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
DC Characteristics
Breakdown voltage
I
= 100 µA
(BR)
Reverse current
V
= 200 V
R
= 200 V, TA = 150 °C
V
R
Forward voltage
I
= 100 mA
F
I
= 200 mA
F
V
I
V
R
(BR)
F
250 - - V
-
-
-
-
≤ 230
≤ 105
≤ 110
-
-
-
-
0.1
100
1
1.25
K/W
µA
V
AC Characteristics
Diode capacitance
V
= 0 V, f = 1 MHz
R
Reverse recovery time
I
= 30 mA, IR = 30 mA, measured at IR = 3mA,
F
R
= 100 Ω
L
C
t
T
rr
Test circuit for reverse recovery time
D.U.T.
Puls generator: tp = 1µs, D = 0.05
t
Oscillograph
Oscillograph: R = 50Ω , t
EHN00018
1
For calculation of R
Ι
F
please refer to Application Note Thermal Resistance
thJA
- - 5 pF
- - 50 ns
= 0.6ns, Ri = 50Ω
r
= 0.35ns, C ≤ 1pF
r
2
2005-09-13
BAS21...
Reverse current IR = ƒ (TA)
V
= 200V
R
BAS 19...21 EHB00027
2
10
A
µ
Ι
R
1
10
5
0
10
5
-1
10
5
-2
10
0 50 100 150
max
typ.
˚C
Forward Voltage VF = ƒ (TA)
I
= Parameter
F
BAS 19...21 EHB00029
1.5
V
V
F
1.0
0.5
0.0
0
50 100 150
Ι
= 625 mA
F
100
10 mA
mA250
mA
˚C
Forward current IF = ƒ (VF)
800
mA
Ι
F
700
600
500
400
300
200
100
T
A
T
A
Forward current IF = ƒ (TS)
BAS21-03W
EHB00028BAS 19...21
300
mA
200
F
I
150
100
50
0
0.0
0.5 1.0 V 1.5
V
F
3
0
0 15 30 45 60 75 90 105 120
2005-09-13
°C
150
T
S