Silicon Schottky Diode
• General-purpose diode for high-speed switching
• Circuit protection
• Voltage clamping
• High-level detecting and mixing
• BAS70-04S: For orientation in reel see
package information below
BAS70... / BAS170W
BAS170W
BAS70-02L
BAS70-04W
BAS70-04SBAS70 BAS70-04
BAS70-02W
"
#$
, "
, !
,
,
!
BAS70-06
BAS70-06W
!
BAS70-07
BAS70-07W
!
,
,
BAS70-07L4
!
,
,
!"
,
,
Type Package Configuration L
BAS170W
BAS70
BAS70-02L
SOD323
SOT23
TSLP-2-1
single
single
single, leadless
BAS70-05
BAS70-05W
,
(nH) Marking
1.8
1.8
0.4
white 7
73s
F
!
,
BAS70-02W
BAS70-04
BAS70-04S
BAS70-04W
BAS70-05
BAS70-05W
BAS70-06
BAS70-06W
BAS70-07
BAS70-07L4
BAS70-07W
SCD80
SOT23
SOT363
SOT323
SOT23
SOT323
SOT23
SOT323
SOT143
TSLP-4-4
SOT343
single
series
dual series
series
common cathode
common cathode
common anode
common anode
parallel pair
parallel pair, leadless
parallel pair
1
0.6
1.8
1.6
1.4
1.8
1.4
1.8
1.4
2
0.4
1.8
73
74s
74s
74s
75s
75s
76s
76s
77s
E
77s
2006-01-19
Maximum Ratings at TA = 25°C, unless otherwise specified
BAS70... / BAS170W
Parameter
Symbol Value Unit
Diode reverse voltage V
Forward current I
Non-repetitive peak surge forward current
I
t ≤ 10ms
Total power dissipation
BAS70, BAS70-07, T
BAS70-02L, BAS70-07L4, T
BAS70-02W, T
≤ 107 °C
S
BAS70-04, BAS70-06, T
≤ 72 °C
S
≤ 48 °C
S
≤ 117 °C
S
BAS70-04S/W/-06W, BAS170W, T
BAS70-05, T
BAS70-05W, T
BAS70-07W, T
≤ 22 °C
S
≤ 90 °C
S
≤ 114 °C
S
≤ 97 °C
S
P
Junction temperature T
R
F
FSM
tot
j
70 V
70 mA
100
mW
250
250
250
250
250
250
250
250
150 °C
Operating temperature range T
Storage temperature T
Thermal Resistance
Parameter
Junction - soldering point1)
BAS70, BAS70-07
BAS70-02L, BAS70-07L4
BAS70-02W
BAS70-04, BAS70-06
BAS70-04S/W, BAS70-06W
BAS70-05
BAS70-05W
BAS70-07W
BAS170W
1
For calculation of R
please refer to Application Note Thermal Resistance
thJA
op
stg
-55 ... 125
-55 ... 150
Symbol Value Unit
R
thJS
K/W
≤ 310
≤ 130
≤ 170
≤ 410
≤ 210
≤ 510
≤ 240
≤ 145
≤ 190
2
2006-01-19
BAS70... / BAS170W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
DC Characteristics
Breakdown voltage
I
= 10 µA
(BR)
Reverse current
V
= 50 V
R
Forward voltage
I
= 1 mA
F
I
= 10 mA
F
I
= 15 mA
F
Forward voltage matching1)
I
= 10 mA
F
AC Characteristics
Diode capacitance
V
= 0 , f = 1 MHz
R
Symbol Values Unit
min. typ. max.
V
I
R
V
∆ V
C
(BR)
F
F
T
70 - - V
- - 0.1
300
600
720
375
705
880
410
750
1000
- - 20
- 1.5 2 pF
µA
mV
Forward resistance
= 10 mA, f = 10 kHz
I
F
Charge carrier life time
I
= 25 mA
F
1
∆V
is the difference between lowest and highest VF in a multiple diode component.
F
r
τ
f
rr
- 34 -
Ω
- - 100 ps
3
2006-01-19
BAS70... / BAS170W
Diode capacitance CT = ƒ (VR)
f = 1MHz
BAS 70W/BAS 170W
2.0
pF
C
T
1.5
1.0
0.5
0.0
0
20 40 60 V 80
EHB00044
V
R
Forward resistance rf = ƒ (IF)
f = 10 kHz
BAS 70W/BAS 170W
3
10
Ω
r
f
2
10
1
10
0
10
0.1
1
EHB00045
10 mA
Ι
100
F
Reverse current IR = ƒ(VR)
= Parameter
T
A
BAS 70W/BAS 170W
2
10
µ
A
Ι
R
1
10
0
10
-1
10
-2
10
-3
10
0
20 40 60 V 80
T
A
EHB00043
= 150 C
85 C
25 C
V
R
Forward current IF = ƒ (VF)
= Parameter
T
A
2
10
mA
Ι
F
1
10
0
10
-1
10
-2
10
0.0
0.5 1.0 V 1.5
TA= -40 C
25 C
85 C
150 C
EHB00042BAS 70W/BAS 170W
V
F
4
2006-01-19
BAS70... / BAS170W
Forward current IF = ƒ (TS)
BAS70, BAS70-07
80
mA
60
F
50
I
40
30
20
10
0
0 15 30 45 60 75 90 105 120
°C
T
Forward current IF = ƒ (TS)
BAS70-02L, BAS70-07L4
80
mA
60
F
50
I
40
30
20
10
150
S
0
0 15 30 45 60 75 90 105 120
°C
150
T
S
Forward current IF = ƒ (TS)
BAS70-02W
80
mA
60
50
F
I
40
30
20
10
0
0 15 30 45 60 75 90 105 120
°C
T
Forward current IF = ƒ (TS)
BAS70-04, BAS70-06
80
mA
60
50
F
I
40
30
20
10
150
S
0
0 15 30 45 60 75 90 105 120
°C
150
T
S
5
2006-01-19
BAS70... / BAS170W
Forward current IF = ƒ (TS)
BAS70-04S/W, BAS70-06W, BAS170W
80
mA
60
F
50
I
40
30
20
10
0
0 15 30 45 60 75 90 105 120
°C
T
S
150
Forward current IF = ƒ (TS)
BAS70-05
80
mA
60
F
50
I
40
30
20
10
0
0 15 30 45 60 75 90 105 120
°C
150
T
S
Forward current IF = ƒ (TS)
BAS70-05W
80
mA
60
50
F
I
40
30
20
10
0
0 15 30 45 60 75 90 105 120
°C
T
Forward current IF = ƒ (TS)
BAS70-07W
80
mA
60
50
F
I
40
30
20
10
150
S
0
0 15 30 45 60 75 90 105 120
T
°C
150
S
6
2006-01-19
BAS70... / BAS170W
Forward current IF = ƒ (TS)
BAS170W
80
mA
60
F
50
I
40
30
20
10
0
0 15 30 45 60 75 90 105 120
°C
T
Permissible Puls Load R
thJS
= ƒ (tp)
BAS70
3
10
K/W
2
10
thJS
R
0.5
0.2
0.1
0.05
10
-4
0.02
0.01
0.005
D = 0
10
-3
10
-2
s
t
0
10
p
1
10
0
10
150
10
-6
10
-5
S
Permissible Pulse Load
I
Fmax
/ I
FDC
= ƒ (tp)
BAS70
2
10
-
FDC
/I
Fmax
I
10
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
-4
10
10
10
1
0
10
-6
10
-5
Permissible Puls Load R
thJS
= ƒ (tp)
BAS70-02L, BAS70-07L4
3
10
K/W
2
10
thJS
R
0.5
10
-4
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
10
-3
10
-2
s
t
0
10
p
1
10
0
-3
10
-2
s
t
0
10
p
10
10
-6
10
-5
7
2006-01-19