INFINEON BAS16, BAS16-02L, BAS16-02V, BAS16-02W, BAS16-03W User Manual
...
Silicon Switching Diode
• For high-speed switching applications
BAS16...
BAS16
BAS16W
BAS16-02L
BAS16-02V
BAS16U
BAS16-07L4BAS16S
BAS16-02W
BAS16-03W
"
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#$
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, , !
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,
Type Package Configuration Marking
BAS16
BAS16-02L*
BAS16-02V
BAS16-02W
BAS16-03W
BAS16-07L4*
BAS16S
BAS16U
SOT23
TSLP-2-1
SC79
SCD80
SOD323
TSLP-4-4
SOT363
SC74
single
single, leadless
single
single
single
parallel pair, leadless
parallel triple
parallel triple
A6s
A6
6
A6
B
6A
A6s
A6s
BAS16W
* Preliminary Data
SOT323
single
1
A6s
2005-11-08
Maximum Ratings at TA = 25°C, unless otherwise specified
g
BAS16...
Parameter
Diode reverse voltage V
Peak reverse voltage V
Forward current
BAS16
BAS16-02L, -07L4
BAS16-02V, -02W
BAS16-03W
BAS16S
BAS16U
BAS16W
Non-repetitive peak surge forward current
t = 1 µs, BAS16/ S/ U/ W/ -03W
t = 1 µs, BAS16-02L/ -02V/ -02W/ -07L4
t = 1 s
Symbol Value Unit
R
RM
I
F
80 V
85
mA
250
200
200
250
200
200
250
I
FSM
A
4.5
2.5
0.5
Total power dissipation
BAS16, T
BAS16-02L, -07L4, T
BAS16-02V, -02W, T
BAS16-03W, T
BAS16S, T
BAS16U, T
BAS16W, T
≤ 54 °C
S
S
≤ 85 °C
S
≤ 113 °C
S
≤ 119 °C
S
≤ 130 °C
S
≤ 120 °C
S
≤ 116 °C
Junction temperature T
Storage temperature T
P
tot
j
st
370
250
250
250
250
250
250
150 °C
-65 ... 150
mW
2
2005-11-08
Thermal Resistance
BAS16...
Parameter
Junction - soldering point1)
Symbol Value Unit
R
thJS
BAS16, BAS16S
BAS16-02L, -07L4
BAS16-02V, -02W
BAS16-03W
BAS16U
BAS16W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
DC Characteristics
Breakdown voltage
I
= 100 µA
(BR)
Reverse current
V
= 75 V
R
V
= 25 V, TA = 150 °C
R
V
= 75 V, TA = 150 °C
R
V
I
R
(BR)
85 - - V
-
-
-
≤ 260
≤ 80
≤ 120
≤ 135
≤ 150
≤ 125
-
-
-
0.1
30
50
K/W
µA
Forward voltage
I
= 1 mA
F
I
= 10 mA
F
I
= 50 mA
F
I
= 100 mA
F
I
= 150 mA
F
Forward recovery voltage
I
= 10 mA, tP = 20 ns
F
1
For calculation of R
please refer to Application Note Thermal Resistance
thJA
V
V
F
-
-
-
-
-
fr
- - 1.75 V
-
-
-
-
-
715
855
1000
1200
1250
mV
3
2005-11-08
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
AC Characteristics
BAS16...
Diode capacitance
V
= 0 V, f = 1 MHz
R
Reverse recovery time
I
= 10 mA, IR = 10 mA, measured at IR = 1mA ,
F
R
= 100 Ω
L
C
t
T
rr
Test circuit for reverse recovery time
D.U.T.
Pulse generator: tp = 100ns, D = 0.05, tr = 0.6ns,
R
Ι
F
Oscillograph
Oscillograph: R = 50Ω, t
EHN00017
- - 2 pF
- - 4 ns
= 50Ω
i
= 0.35ns, C = 0.05pF
r
4
2005-11-08
BAS16...
Reverse current IR = ƒ (TA)
V
= Parameter
R
5
10
nA
4
10
R
I
3
10
2
10
1
10
0 25 50 75 100
70 V
25 V
°C
Forward Voltage VF = ƒ (TA)
I
= Parameter
F
BAS 16 EHB00025
1.0
V
V
F
0.5
150
T
A
Ι
= 100 mA
F
10 mA
1 mA
0.1 mA
0
0 50 100 150
C
T
A
Forward current IF = ƒ (VF)
T
= 25°C
A
150
Ι
F
mA
100
50
0
0
0.5 1.0 V 1.5
Forward current IF = ƒ (TS)
BAS16
EHB00023BAS 16
maxtyp
V
F
300
mA
200
F
I
150
100
50
0
0 15 30 45 60 75 90 105 120
°C
150
T
S
5
2005-11-08
BAS16...
Forward current IF = ƒ (TS)
BAS16-02L, -07L4
250
mA
F
I
150
100
50
0
0 15 30 45 60 75 90 105 120
°C
Forward current IF = ƒ (TS)
BAS16-02V, -02W
250
mA
F
I
150
100
50
150
T
S
0
0 15 30 45 60 75 90 105 120
°C
150
T
S
Forward current IF = ƒ (TS)
BAS16-03W
300
mA
200
F
I
150
100
50
0
0 15 30 45 60 75 90 105 120
°C
Forward current IF = ƒ (TS)
BAS16S
250
mA
F
I
150
100
50
150
T
S
0
0 15 30 45 60 75 90 105 120
°C
T
150
S
6
2005-11-08
BAS16...
Forward current IF = ƒ (TS)
BAS16U
250
mA
200
175
F
I
150
125
100
75
50
25
0
0 15 30 45 60 75 90 105 120
T
°C
Forward current IF = ƒ (TS)
BAS16W
300
mA
200
F
I
150
100
50
150
0
0 15 30 45 60 75 90 105 120
S
°C
150
T
S
Permissible Puls Load R
BAS16
3
10
K/W
2
10
thJS
R
10
10
10
-1
1
0
10
-7
-6
10
10
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
-5
-4
10
thJS
10
= ƒ (tp)
-3
10
Permissible Pulse Load
I
Fmax
/ I
FDC
= ƒ (tp)
BAS16
2
10
FDC
/I
Fmax
I
1
10
0
-2
s
t
0
10
p
10
10
-7
-6
10
10
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
-5
-4
-3
10
10
10
-2
t
0
s
10
p
7
2005-11-08
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