INFINEON BAS140W, BAS40, BAS40-02L, BAS40-04, BAS40-05 User Manual
...
Silicon Schottky Diode
• General-purpose diode for high-speed switching
• Circuit protection
• Voltage clamping
• High-level detecting and mixing
BAS40.../BAS140W
BAS140W
BAS40-02L
1 2
BAS40 BAS40-04
3
1 2
3
D 1
D 2
1
2
BAS40-05
BAS40-05W
3
D 2
D 1
1
2
BAS40-07
BAS40-07W
34
D 2
D 1
1
2
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Package Configuration L
BAS140W
BAS40
BAS40-02L
BAS40-04
SOD323
SOT23
TSLP-2-1
SOT23
single
single
single, leadless
series
(nH) Marking
S
1.8
1.8
0.4
1.8
BAS40-06
BAS40-06W
3
D 2
D 1
1
2
white 4
43s
FF
44s
BAS40-05
BAS40-05W
BAS40-06
BAS40-06W
BAS40-07
BAS40-07W
SOT23
SOT323
SOT23
SOT323
SOT143
SOT343
common cathode
common cathode
common anode
common anode
parallel pair
parallel pair
1
1.8
1.4
1.8
1.4
2
1.6
45s
45s
46s
46s
47s
47s
2006-07-18
Maximum Ratings at TA = 25°C, unless otherwise specified
BAS40.../BAS140W
Parameter
Symbol Value Unit
Diode reverse voltage V
Forward current I
Non-repetitive peak surge forward current
I
t ≤ 10ms
Total power dissipation
BAS140W, T
BAS40, BAS40-07, T
BAS40-02L, T
≤ 113°C
S
≤ 127°C
S
≤ 81°C
S
BAS40-04, BAS40-06, T
BAS40-06W, T
BAS40-05, T
BAS40-05W, T
BAS40-07W, T
≤ 106°C
S
≤ 31°C
S
≤ 98°C
S
≤ 118°C
S
≤ 56°C
S
P
Junction temperature T
R
F
FSM
tot
j
40 V
120 mA
200
mW
250
250
250
250
250
250
250
250
150 °C
Operating temperature range T
Storage temperature T
Thermal Resistance
Parameter
Junction - soldering point1)
BAS140W
BAS40, BAS40-07
BAS40-02L
BAS40-04, BAS40-06
BAS40-06W
BAS40-05
BAS40-05W
BAS40-07W
1
For calculation of R
please refer to Application Note Thermal Resistance
thJA
op
stg
-55 ... 125
-55 ... 150
Symbol Value Unit
R
thJS
K/W
≤ 150
≤ 275
≤ 90
≤ 375
≤ 175
≤ 475
≤ 205
≤ 125
2
2006-07-18
Electrical Characteristics at TA = 25°C, unless otherwise specified
BAS40.../BAS140W
Parameter
DC Characteristics
Breakdown voltage
I
= 10 µA
(BR)
Reverse current
V
= 30 V
R
Forward voltage
I
= 1 mA
F
I
= 10 mA
F
I
= 40 mA
F
Forward voltage matching1)
I
= 10 mA
F
AC Characteristics
Diode capacitance
V
= 0 , f = 1 MHz
R
Symbol Values Unit
min. typ. max.
V
(BR)
I
R
V
F
∆ V
C
T
F
40 - - V
- - 1
250
350
600
310
450
720
380
500
1000
- - 20
- 3 5 pF
µA
mV
Differential forward resistance
= 10 mA, f = 10 kHz
I
F
Charge carrier life time
I
= 25 mA
F
1
∆V
is the difference between lowest and highest VF in a multiple diode component.
F
R
τ
F
rr
- 10 - Ω
- - 100 ps
3
2006-07-18
BAS40.../BAS140W
Diode capacitance C
f = 1MHz
5
C
T
pF
4
3
2
1
0
0
10 20 V 30
= ƒ (V
T
)
R
Forward resistance r
= ƒ (I
f
)
F
f = 10 kHz
EHB00040BAS 40...
V
R
3
10
r
f
Ω
2
10
1
10
3
10
0.1
1 10 mA 100
EHB00041BAS 40...
Ι
F
Reverse current I
= Parameter
V
R
-4
10
A
-5
10
R
I
-6
10
-7
10
-8
10
0 25 50 75 100
= ƒ (T
R
)
A
VR = 40V
30V
20V
10V
°C
Reverse current I
= Parameter
T
A
3
10
Ι
R
µ
A
2
10
1
10
= ƒ(V
R
)
R
EHB00039BAS 40...
TA= 150 C
85 C
0
10
-1
10
25 C
-2
150
T
A
10
0
10 20 30 V 40
V
R
4
2006-07-18
BAS40.../BAS140W
Forward Voltage V
= Parameter
I
F
0.8
V
0.6
F
0.5
V
0.4
0.3
0.2
0.1
0
-50 -25 0 25 50 75 100
= ƒ (T
F
)
A
IF = 40 mA
10 mA
1 mA
0.1 mA
10 µA
1 µA
°C
T
A
150
Forward current I
= Parameter
T
A
2
10
Ι
F
mA
1
10
0
10
-1
10
-2
10
0.0
= ƒ (V
F
)
F
T
A
EHB00038BAS 40...
= -40 ˚C
25 ˚C
85 ˚C
150 ˚C
0.5 1.0 V 1.5
V
F
Forward current I
BAS140W
140
mA
100
F
I
80
60
40
20
0
0 15 30 45 60 75 90 105 120
= ƒ (T
F
)
S
Forward current I
= ƒ (T
F
)
S
BAS40, BAS40-07
140
mA
100
F
I
80
60
40
20
0
0 15 30 45 60 75 90 105 120
°C
150
T
S
T
°C
150
S
5
2006-07-18
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