Infineon BAS125-07 Schematic [ru]
Silicon Schottky Diodes
g
BAS 125-07
• For low-loss, fast-recovery, meter protection,
3
bias isolation and clamping applications
• Integrated diffused guard ring
4
• Low forward voltage
1
14
32
EHA07008
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BAS 125-07 17s 1 = C1 2 = C2 3 = A2 4 = A1 SOT-143
Maximum Ratings
2
VPS05178
Parameter
Symbol UnitValue
V
Forward current
I
Surge forward current (t< 100µs) I
Total power dissipation, TS = 25 °C P
Junction temperature
Storage temperature
T
T
Maximum Ratings
Junction - ambient
1)
R
R
F
FSM
tot
j
st
thJA
25
100 mA
500
250 mW
150 °C
-55 ... 150
≤ 450
VDiode reverse voltage
K/W
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Oct-07-19991
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BAS 125-07
Parameter
DC characteristics
Reverse current
V
= 20 V
R
V
= 25 V
R
I
= 1 mA
F
I
= 10 mA
F
I
= 35 mA
F
AC characteristics
V
= 0 V, f = 1 MHz
R
I
= 5 mA, f = 10 kHz
F
Symbol UnitValues
I
V
C
R
F
T
f
-
-
-
-
-
-Diode capacitance
-
-
385
530
800
-
16-Differential forward resistance
max.min. typ.
100
150
400
650
950
1.1
µA
mVForward voltage
pF
-
Ωr
Oct-07-19992
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