INFINEON BAS116 User Manual
Silicon Low Leakage Diode
g
• Low-leakage applications
• Medium speed switching times
BAS116
!
BAS116...
Type Package Configuration Marking
BAS116 SOT23 single JVs
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Diode reverse voltage V
Peak reverse voltage V
Forward current I
Repetitive peak forward current I
Non-repetitive peak surge forward current
t = 1 µs
t = 1 s
Total power dissipation
T
≤ 54°C
S
Symbol Value Unit
R
RM
F
FRM
I
FSM
80 V
85
250 mA
- A
4.5
0.5
P
tot
370 mW
Junction temperature T
Storage temperature T
j
st
150 °C
-65 ... 150
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol Value Unit
R
thJS
≤ 260
K/W
BAS116
1
For calculation of R
please refer to Application Note Thermal Resistance
thJA
1
2005-10-18
Electrical Characteristics at TA = 25°C, unless otherwise specified
BAS116...
Parameter
DC Characteristics
Breakdown voltage
= 100 µA
I
(BR)
Reverse current
= 75 V
V
R
= 75 V, TA = 150 °C
V
R
Forward voltage
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
I
F
AC Characteristics
Diode capacitance
V
= 0 V, f = 1 MHz
R
Symbol Values Unit
min. typ. max.
V
I
V
R
C
(BR)
F
T
85 - - V
-
-
-
-
-
-
-
-
-
-
-
-
5
80
900
1000
1100
1250
nA
mV
- 2 - pF
Reverse recovery time
I
= 10 mA, IR = 10 mA, measured at IR = 1mA ,
F
R
= 100 Ω
L
t
rr
Test circuit for reverse recovery time
D.U.T.
Puls generator: tp = 10µs, D = 0.05,
t
Ι
F
Oscillograph
Oscillograph: R = 50Ω , t
EHN00022
= 0.6ns, Ri = 50Ω
r
- 0.6 1.5 µs
= 0.35ns, C ≤ 1pF
r
2
2005-10-18
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