INFINEON BAR81W User Manual
Silicon RF Switching Diode
Designed for use in shunt configuration in
high performance RF switches
High shunt signal isolation
Low shunt insertion loss
Optimized for short - open transformation
BAR81...
using
lines
BAR81W
4 3
21
Type Package Configuration L
(nH) Marking
S
BAR81W SOT343 single shunt-diode 0.15* BBs
* series inductance chip to ground
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Diode reverse voltage V
Forward current I
Total power dissipation
T
138°C
s
Symbol Value Unit
30 V
100 mA
100 mW
P
R
F
tot
Junction temperature T
Operating temperature range T
Storage temperature T
Thermal Resistance
Parameter
Junction - soldering point
1
For calculation of R
thJA
1)
please refer to Application Note Thermal Resistance
1
j
op
stg
150 °C
-55 ... 125
-55 ... 150
Symbol Value Unit
R
thJS
120
K/W
Dec-20-2002
Electrical Characteristics at TA = 25°C, unless otherwise specified
BAR81...
Parameter
DC Characteristics
Reverse current
V
= 20 V
R
Forward voltage
I
= 100 mA
F
AC Characteristics
Diode capacitance
= 1 V, f = 1 MHz
V
R
V
= 3 V, f = 1 MHz
R
Forward resistance
= 5 mA, f = 100 MHz
I
F
Charge carrier life time
= 10 mA, IR = 6 mA, measured at IR = 3 mA,
I
F
R
= 100
L
Symbol Values Unit
min. typ. max.
- - 20
nA
- 0.93 1 V
-
-
0.6
0.57
0.9
- 0.7 1
1
pF
- 80 - ns
C
r
I
V
R
F
T
f
rr
I-region width W
Shunt insertion loss1)
= 3 V, f = 1.89 GHz
V
R
Shunt isolation1)
= 10 mA , f = 1.89 GHz
I
F
|S21|
|S21|
Configuration of the shunt-diode
- A perfect ground is essential for optimum isolation
- The anode pins should be used as passage for RF
1
For more information please refer to Application Note 049.
I
2
2
- 3.5 - µm
- 0.7 - dB
- 30 -
2
Dec-20-2002
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