Infineon BAR67-02V, BAR67-04 Schematic

Silicon PIN Diode

g

• For low loss RF switches and attenuators

• Very low capacitance at zero volt reverse

bias at frequencies above 1 GHz (typ. 0.25 pF)

• Low forward resistance (typ. 1.5 Ω @ 5mA)

• Low harmonics

• Pb-free (RoHS compliant) package

BAR67-02V BAR67-04

!

BAR67...

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, 

,

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Type Package Configuration L

BAR67-02V BAR67-04

SC79 SOT23

single series

Maximum Ratings at TA = 25°C, unless otherwise specified

Parameter

Diode reverse voltage V

Forward current I

Total power dissipation

≤ 118°C, BAR67-02V

T

S

≤ 25°C, BAR67-04

T

S

Junction temperature T

Operating temperature range T

Storage temperature T

Symbol Value Unit

150 V

200 mA

P

R

F

tot

250

j

op

st

150 °C

-55 ... 125

-55 ... 150

(nH) Marking

S

0.6

1.8

T PMs

mW

Thermal Resistance

Parameter

Junction - soldering point1)

BAR67-02V

BAR67-04

1

For calculation of R

please refer to Application Note Thermal Resistance

thJA

Symbol Value Unit

R

thJS

≤ 115

≤ 290

1

2011-06-14

K/W

Electrical Characteristics at TA = 25°C, unless otherwise specified

BAR67...

Parameter

DC Characteristics

Breakdown voltage

I

= 5 µA

(BR)

Reverse current

V

= 100 V

R

Forward voltage

I

= 50 mA

F

AC Characteristics

Diode capacitance

V

= 5 V, f = 1 MHz

R

V

= 0 V, f = 100 MHz

R

V

= 0 V, f = 1 GHz

R

V

= 0 V, f = 1.8 GHz

R

Symbol Values Unit

min. typ. max.

V

I

V

R

C

(BR)

F

T

150 - - V

- - 20

nA

- 0.95 1.2 V

-

0.35

0.25

0.23

0.55

0.9

-

pF

Reverse parallel resistance

V

= 0 V, f = 100 MHz

R

V

= 0 V, f = 1 GHz

R

V

= 0 V, f = 1.8 GHz

R

Forward resistance

I

= 5 mA, f = 100 MHz

F

I

= 10 mA, f = 100 MHz

F

Charge carrier life time

I

= 10 mA, IR = 6 mA, measured at IR = 3 mA,

F

R

= 100 Ω

L

R

r

τ

I-region width W

P

-

f

-

rr

I

- 700 - ns

- 13 - µm

25

4

2.5

1.5

1

-

1.8

-

kΩ

Ω

2

2011-06-14

BAR67...

Diode capacitance CT = ƒ (VR)

f = Parameter

0.5

F

0.4

T

0.35

C

0.3

0.25

0.2

0.15

0.1 0 5 10 15 20 25 30

1 MHz 100 MHz 1 GHz

1.8 GHz

Reverse parallel resistance RP = ƒ(VR)

f = Parameter

4

10

KOhm

3

10

p

2

R

10

1

10

0

10

-1

V

40

V

R

10

0 5 10 15 20 25 30

100 MHz

1 GHz

1.8 GHz

V

40

V

R

Forward resistance rf = ƒ (IF)

f = 100MHz

3

10

Ohm

2

10

f

r

1

10

0

10

-1

10

-2

10

-1

10

0

10

Forward current IF = ƒ (VF)

T

= Parameter

A

0

10

A

-1

10

-2

10

F

I

-3

10

-40 °C 25 °C

-4

10

-5

10

-6

1

I

mA

F

10

2

10

0 0.2 0.4 0.6 0.8

85 °C 125 °C

V

1.2

F

3

2011-06-14

Infineon BAR67-02V, BAR67-04 Schematic [ru]