INFINEON BAR66 User Manual
Silicon PIN Diode Array
• Surge protection device
• Designed for surge overvoltage clamping
in antiparallel connection
BAR66
3
D1
D2
1
2
BAR66...
Type Package Configuration L
(nH) Marking
S
BAR66 SOT23 series 1.8 PMs
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage V
Forward current I
Total power dissipation
25 °C
T
s
P
Junction temperature T
Operating temperature range T
Storage temperature T
R
F
tot
j
op
stg
150 V
200 mA
250 mW
150 °C
-55 ... 125
-55 ... 150
Thermal Resistance
Parameter
Junction - soldering point1), BAR66 R
1
For calculation of R
please refer to Application Note Thermal Resistance
thJA
Symbol Value Unit
thJS
290
K/W
1
Feb-04-2003
Electrical Characteristics at TA = 25°C, unless otherwise specified
BAR66...
Parameter
DC Characteristics
Breakdown voltage
= 5 µA
I
(BR)
Reverse current
= 100 V
V
R
Forward voltage
I
= 50 mA
F
AC Characteristics
Diode capacitance
= 35 V, f = 1 MHz
V
R
= 0 V, f = 100 MHz
V
R
Zero bias conductance
= 0 V, f = 100 MHz
V
R
Symbol Values Unit
min. typ. max.
V
I
V
C
g
(BR)
R
F
T
P
150 - - V
- - 20
nA
- 0.95 1.2 V
-
-
- 220 -
0.4
0.35
0.6
0.9
µs
pF
Forward resistance
= 5 mA, f = 100 MHz
I
F
Charge carrier life time
= 10 mA, IR = 6 mA, measured at IR = 3 mA,
I
F
= 100
R
L
r
f
rr
- 1.5 1.8
- 0.7 -
µs
2
Feb-04-2003
Loading...