Infineon BAR66 Schematic [ru]

Silicon PIN Diode Array

A

p

pp

j

p

g

• Surge protection device

• Designed for surge overvoltage clamping

in antiparallel connection

• Pb-free (RoHS compliant) package

BAR66

!

, 

,

BAR66...



Type Package Configuration L

(nH) Marking

S

BAR66 SOT23 series 1.8 PMs

Maximum Ratings at T

= 25°C, unless otherwise specified

Parameter Symbol Value Unit

Diode reverse voltage V

Forward current I

Total power dissipation

T

≤ 25 °C

s

ESD contact discharge

Peak pulse current (t

1)

= 8 / 20 µs)2) I

P

V

Junction temperature T

Operating temperature range T

Storage temperature T

R

F

tot

ESD

o

st

150 V

200 mA

250 mW

25 kV

12 A

150 °C

-55 ... 125

-55 ... 150

Thermal Resistance

Parameter Symbol Value Unit

Junction - soldering point3), BAR 66 R

1

V

according to IEC61000-4-2, only valid if pin 1 and pin 2 are connected

ESD

2

Ipp according to IEC61000-4-5, only valid if pin 1 and pin 2 are connected

3

For calculation of R

please refer to Application Note Thermal Resistance

thJA

thJS

≤ 290

1

K/W

2011-06-27

BAR66...

A

Electrical Characteristics at T

= 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Breakdown voltage

I

= 5 µA

(BR)

Reverse current

V

= 100 V

R

Forward voltage

I

= 50 mA

F

Clamping voltage

V

= ± 15 kV (contact)1)

ESD

I

= 12 A, tp = 8/20 µs

PP

2)

V

I

V

V

R

(BR)

F

CL

150 - - V

- - 20

nA

- 0.95 1.2 V

-

-

tbd

7

-

-

AC Characteristics

Diode capacitance

V

= 35 V, f = 1 MHz

R

V

= 0 V, f = 100 MHz

R

C

T

-

-

0.4

0.35

0.6

0.9

pF

Zero bias conductance

V

= 0 V, f = 1 GHz

R

Forward resistance

I

= 5 mA, f = 100 MHz

F

Charge carrier life time

I

= 10 mA, IR = 6 mA, measured at IR = 3 mA,

F

R

= 100 Ω

L

1

V

according to IEC61000-4-2, only valid if pin 1 and pin 2 are connected

ESD

2

I

according to IEC61000-4-5, only valid if pin 1 and pin 2 are connected

pp

g

r

τ

P

f

rr

- 220 -

- 1.5 1.8

- 0.7 -

µS

Ω

µs

2

2011-06-27

BAR66...

Diode capacitance CT = ƒ (VR)

f = Parameter

0.8

pF

0.6

T

0.5

C

0.4

0.3

0.2

0.1

0

0 5 10 15 20 25

1MHz

100MHz

Forward resistance rf = ƒ (IF)

f = 100MHz

3

10

Ohm

2

10

f

r

1

10

0

10

-1

10

V

35

V

R

10

-2

10

-1

10

0

10

1

I

mA

F

10

2

Forward current IF = ƒ (VF)

T

= Parameter

A

0

10

A

-1

10

-2

10

F

I

-3

10

-4

10

-5

10

-6

10

0 0.2 0.4 0.6 0.8

-40 °C
25 °C
85 °C
125 °C

V

Forward current IF = ƒ (TS)

BAR66

220

mA

180

160

140

F

I

120

100

80

60

40

20

1.2

V

F

0

0 20 40 60 80 100 120

°C

TS

150

3

2011-06-27