Silicon PIN Diode
• High voltage current controlled RF resistor
for RF attenuator and switches
• Frequency range above 1 MHz up to 6 GHz
• Very low capacitance at zero volt reverse bias
at frequencies above 1 GHz (typ. 0.17 pF)
• Low forward resistance (typ. 2.1 Ω @ 10 mA)
• Very low signal distortion
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
1)
BAR64...
BAR64-02LRH
BAR64-02V
BAR64-04
BAR64-04W
BAR64-05
BAR64-05W
BAR64-06
BAR64-06W
BAR64-03W
!
,
,
!
,
,
!
,
,
Type Package Configuration L
BAR64-02LRH*
BAR64-02V
BAR64-03W
BAR64-04
BAR64-04W
BAR64-05
BAR64-05W
BAR64-06
BAR64-06W
BAR64-07
TSLP-2-7
SC79
SOD323
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
SOT143
single, leadless
single
single
series
series
common cathode
common cathode
common anode
common anode
parallel pair
BAR64-07
,
(nH) Marking
S
0.4
0.6
1.8
1.8
1.4
1.8
1.4
1.8
1.4
2
O
O
blue 2
PPs
PPs
PRs
PRs
PSs
PSs
PTs
!"
,
1
*BAR64-02LRH is not qualified according AEC Q101
1
2011-07-18
Maximum Ratings at TA = 25°C, unless otherwise specified
BAR64...
Parameter
Symbol Value Unit
Diode reverse voltage V
Forward current I
Total power dissipation
BAR64-02LRH, T
BAR64-02V, T
S
BAR64-03W, BAR64-07, T
BAR64-04, -05, -06, T
135 °C
S ≤
≤ 125 °C
≤ 65 °C
S
S
BAR64-04W, -05W, -06W, T
≤ 25 °C
≤ 115 °C
S
P
Junction temperature T
Operating temperature range T
Storage temperature T
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol Value Unit
R
BAR64-02LRH
R
F
tot
j
op
st
thJS
150 V
100 mA
250
250
250
250
250
150 °C
-55 ... 125
-55 ... 150
≤ 60
mW
BAR64-02V, -04W, -05W, -06W
BAR64-03W
BAR64-04, -05, -06
BAR64-07
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
DC Characteristics
Breakdown voltage
I
= 5 µA
(BR)
Forward voltage
I
= 50 mA
F
1
For calculation of R
thJA
V
(BR)
V
F
please refer to Application Note Thermal Resistance
150 - - V
- - 1.1
≤ 140
≤ 370
≤ 340
≤ 290
2
2011-07-18
Electrical Characteristics at TA = 25°C, unless otherwise specified
BAR64...
Parameter
AC Characteristics
Diode capacitance
V
= 20 V, f = 1 MHz
R
= 0 V, f = 100 MHz
V
R
V
= 0 V, f = 1...1.8 GHz, BAR64-02LRH
R
V
= 0 V, f = 1...1.8 GHz, all other
R
Reverse parallel resistance
V
= 0 V, f = 100 MHz
R
= 0 V, f = 1 GHz
V
R
V
= 0 V, f = 1.8 GHz
R
Forward resistance
I
= 1 mA, f = 100 MHz
F
= 10 mA, f = 100 MHz
I
F
I
= 100 mA, f = 100 MHz
F
Symbol Values Unit
min. typ. max.
C
R
r
T
-
-
-
-
P
-
-
-
f
-
-
-
0.23
0.3
0.13
0.17
10
4
3
12.5
2.1
0.85
0.35
20
2.8
1.35
pF
-
-
-
kΩ
-
-
-
Ω
Charge carrier life time
I
= 10 mA, IR = 6 mA, measured at IR = 3 mA,
F
= 100 Ω
R
L
I-region width W
Insertion loss1)
I
= 3 mA, f = 1.8 GHz
F
= 5 mA, f = 1.8 GHz
I
F
I
= 10 mA, f = 1.8 GHz
F
Isolation1)
V
= 0 V, f = 0.9 GHz
R
= 0 V, f = 1.8 GHz
V
R
V
= 0 V, f = 2.45 GHz
R
V
= 0 V, f = 5.6 GHz
R
1
BAR64-02LRH in series configuration, Z = 50 Ω
τ
I
L
I
SO
rr
- 1550 - ns
I
- 50 - µm
-
-
-
-
-
-
-
0.32
0.23
0.16
22
17
14.5
8.5
dB
-
-
-
-
-
-
-
3
2011-07-18
BAR64...
Diode capacitance CT = ƒ (VR)
f = Parameter
0.7
pF
0.5
T
C
1 MHz
0.4
0.3
0.2
0.1
0 2 4 6 8 10 12 14 16
100 MHz
1 GHz
1.8 GHz
Reverse parallel resistance RP = ƒ(VR)
f = Parameter
4
10
KOhm
3
10
p
2
R
10
1
10
0
10
-1
V
20
V
R
10
0 5 10 15 20 25 30
100 MHz
1 GHz
1.8 GHz
V
40
V
R
Forward resistance rf = ƒ (IF)
f = 100MHz
3
10
Ohm
2
10
F
R
1
10
0
10
-1
10
10
-2
10
-1
10
0
10
Forward current IF = ƒ (VF)
T
= Parameter
A
0
10
A
-1
10
-2
10
F
I
-3
10
-40 °C
-4
10
-5
10
-6
1
mA
10
2
10
0 0.2 0.4 0.6 0.8
IF
25 °C
85 °C
125 °C
V
1.2
V
F
4
2011-07-18
BAR64...
Intermodulation intercept point
IP
= ƒ (IF); f = Parameter
3
2
10
f=900MHz
f=1800MHz
3
IP
dBm
1
10
10
-1
10
0
mA
Forward current IF = ƒ (TS)
BAR64-02LRH
120
mA
100
90
80
F
I
70
60
50
40
30
20
10
1
10
I
F
0
0 30 60 90 120
°C
165
T
S
Forward current IF = ƒ (TS)
BAR64-02V
120
mA
100
90
80
F
I
70
60
50
40
30
20
10
0
0 15 30 45 60 75 90 105 120
Forward current IF = ƒ (TS)
BAR64-04, BAR64-05, BAR64-06
120
mA
100
90
80
F
I
70
60
50
40
30
20
10
°C
150
T
S
0
0 15 30 45 60 75 90 105 120
°C
150
T
S
5
2011-07-18
Forward current IF = ƒ (TS)
BAR64-04W, BAR64-05W, BAR64-06W
120
mA
100
90
80
F
I
70
60
50
40
30
BAR64...
20
10
0
0 15 30 45 60 75 90 105 120
Permissible Puls Load R
BAR64-02LRH
2
10
K/W
1
10
thJS
R
0.5
10
-4
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
10
10
10
-1
0
10
-6
10
-5
thJS
-3
= ƒ (tp)
-2
10
°C
150
T
S
Permissible Pulse Load
I
Fmax
/ I
FDC
= ƒ (tp)
BAR64-02LRH
2
10
-
FDC
/I
10
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
-4
10
-3
10
-2
s
t
0
10
p
Fmax
I
1
10
0
s
t
0
10
p
10
10
-6
10
-5
6
2011-07-18