Silicon PIN Diode
High voltage current controlled RF resistor
for RF attenuator and switches
Frequency range above 1 MHz up to 6 GHz
Very low capacitance at zero volt reverse bias
at frequencies above 1 GHz (typ. 0.17 pF)
Low forward resistance (typ. 2.1 @ 10 mA)
Very low signal distortion
BAR64...
BAR64-02L
BAR64-02V
BAR64-03W
1 2
BAR64-04T
BAR64-04W
3
D1
D2
1
2
BAR64-05
BAR64-05W
3
D2
D1
1
2
BAR64-06
BAR64-06W
3
D2
D1
1
2
Type Package Configuration L
BAR64-02L *
BAR64-02V
BAR64-03W
BAR64-04
BAR64-04T
BAR64-04W
BAR64-05
BAR64-05W
BAR64-06
BAR64-06W
TSLP-2-1
SC79
SOD323
SOT23
SC75
SOT323
SOT23
SOT323
SOT23
SOD323
single, leadless
single
single
series
series
series
common cathode
common cathode
common anode
common anode
BAR64-07BAR64-04
34
D2
D1
1
2
(nH) Marking
S
0.4
0.6
1.8
1.8
1.2
1.4
1.8
1.4
1.8
1.4
MM
O
2 blue
PPs
PPs
PPs
PRs
PRs
PSs
PSs
BAR64-07
* Preliminary Data
SOT143
parallel pair
1
2
PTs
Feb-14-2003
Maximum Ratings at TA = 25°C, unless otherwise specified
BAR64...
Parameter
Symbol Value Unit
Diode reverse voltage V
Forward current I
Total power dissipation
BAR64-02L, T
BAR64-02V, T
BAR64-03W, BAR64-07, T
BAR64-04, -05, -06, T
BAR64-04T, T
135 °C
S ≤
≤ 125 °C
S
≤ 109 °C
S
≤ 65 °C
S
S
BAR64-04W, -05W, -06W, T
≤ 25 °C
≤ 115 °C
S
P
Junction temperature T
Operating temperature range T
Storage temperature T
Thermal Resistance
Parameter
Symbol Value Unit
F
R
tot
j
op
stg
150 V
100 mA
250
250
250
250
250
250
150 °C
-55 ... 125
-55 ... 150
mW
Junction - soldering point1)
R
thJS
BAR64-02L
BAR64-02V, -04W, -05W, -06W
BAR64-03W
BAR64-04, -05, -06
BAR64-04T
BAR64-07
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
DC Characteristics
Breakdown voltage
I
= 5 µA
(BR)
Forward voltage
I
= 50 mA
F
1
For calculation of R
thJA
V
(BR)
V
F
please refer to Application Note Thermal Resistance
150 - - V
- - 1.1
≤ 60
≤ 140
≤ 370
≤ 340
≤ 165
≤ 290
2
Feb-14-2003
Electrical Characteristics at TA = 25°C, unless otherwise specified
BAR64...
Parameter
AC Characteristics
Diode capacitance
V
= 20 V, f = 1 MHz
R
V
= 0 V, f = 100 MHz
R
V
= 0 V, f = 1...1.8 GHz, BAR64-02L
R
V
= 0 V, f = 1...1.8 GHz, all other
R
Reverse parallel resistance
V
= 0 V, f = 100 MHz
R
V
= 0 V, f = 1 GHz
R
V
= 0 V, f = 1.8 GHz
R
Forward resistance
I
= 1 mA, f = 100 MHz
F
I
= 10 mA, f = 100 MHz
F
I
= 100 mA, f = 100 MHz
F
Symbol Values Unit
min. typ. max.
C
R
r
T
-
-
-
-
P
-
-
-
f
-
-
-
0.23
0.3
0.13
0.17
10
4
3
12.5
2.1
0.85
0.35
20
2.8
1.35
pF
-
-
-
k
-
-
-
Charge carrier life time
I
= 10 mA, IR = 6 mA, measured at IR = 3 mA,
F
R
= 100
L
I-region width W
Insertion loss1)
I
= 3 mA, f = 1.8 GHz
F
I
= 5 mA, f = 1.8 GHz
F
I
= 10 mA, f = 1.8 GHz
F
Isolation1)
V
= 0 V, f = 0.9 GHz
R
V
= 0 V, f = 1.8 GHz
R
V
= 0 V, f = 2.45 GHz
R
V
= 0 V, f = 5.6 GHz
R
1
BAR64-02L in series configuration, Z = 50
|S21|
|S21|
rr
I
2
2
- 1550 - ns
- 50 - µm
-
-
-
-
-
-
-
-0.32
-0.23
-0.16
-22
-17
-14.5
-8.5
dB
-
-
-
-
-
-
-
3
Feb-14-2003