INFINEON BAR50-02L, BAR50-02V, BAR50-03W, BAR50-05 User Manual
Silicon PIN Diodes
A
j
p
g
Current-controlled RF resistor
for switching and attenuating applications
Frequency range above 10 MHz up to 6 GHz
Especially useful as antenna switch
in mobile communication
Very low capacitance at zero volt reverse bias
at freuencies above 1 GHz (typ. 0.15 pF)
Low forward resitance
Very low harmonics
BAR50...
BAR50-02L
BAR50-05
BAR50-02V
BAR50-03W
3
1 2
Type Package Configuration L
BAR50-02L*
BAR50-02V
BAR50-03W
BAR50-05*
D2
D1
1
2
(nH) Marking
S
TSLP-2-1
SC79
SOD323
SOT23
single,leadless
single
single
common cathode
0.4
0.6
1.4
1.8
AB
a
blue A
OCs
* Preliminary
Maximum Ratings at T
= 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage V
Forward current I
Total power dissipation
T
BAR50-02L,
BAR50-02V,
BAR50-03W,
BAR50-05,
130°C
S
T
120°C
S
T
S
T
60°C
S
116°C
P
R
F
tot
50 V
100 mA
mW
250
250
250
250
Junction temperature T
Operating temperature range T
Storage temperature T
o
st
1
150 °C
-55 ... 125
-55 ... 150
Feb-04-2003
BAR50...
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1)
R
thJS
BAR50-02L
BAR50-02V
BAR50-03W
BAR50-05
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
DC Characteristics
Reverse current
V
= 50 V
R
Forward voltage
I
= 50 mA
F
1
For calculation of R
I
R
V
F
please refer to Application Note Thermal Resistance
thJA
- - 50
- 0.95 1.1 V
120
135
360
80
K/W
nA
2
Feb-04-2003
Electrical Characteristics at TA = 25°C, unless otherwise specified
BAR50...
Parameter
AC Characteristics
Diode capacitance
= 1 V, f = 1 MHz
V
R
V
= 5 V, f = 1 MHz
R
= 0 V, f = 100 MHz
V
R
= 0 V, f = 1...1.8 GHz, BAR50-02L
V
R
V
= 0 V, f = 1...1.8 GHz, all other
R
Reverse parallel resistance
= 0 V, f = 100 MHz
V
R
V
= 0 V, f = 1 GHz
R
= 0 V, f = 1.8 GHz
V
R
Forward resistance
= 0.5 mA, f = 100 MHz
I
F
I
= 1 mA, f = 100 MHz
F
= 10 mA, f = 100 MHz
I
F
Symbol Values Unit
min. typ. max.
C
R
r
T
-
-
-
-
-
P
-
-
-
f
-
-
-
0.24
0.2
0.2
0.1
0.15
25
6
5
25
16.5
3
0.5
0.4
40
25
4.5
pF
-
-
-
k
-
-
-
Charge carrier life time
= 10 mA, IR = 6 mA, measured at IR = 3 mA,
I
F
R
= 100
L
I-region width W
Insertion loss1)
= 3 mA, f = 1.8 GHz
I
F
I
= 5 mA, f = 1.8 GHz
F
= 10 mA, f = 1.8 GHz
I
F
Isolation1)
= 0 V, f = 0.9 GHz
V
R
V
= 0 V, f = 1.8 GHz
R
= 0 V, f = 2.45 GHz
V
R
= 0 V, f = 5.6 GHz
V
R
1
BAR50-02L in series configuration, Z = 50
|S21|
|S21|
rr
I
2
2
- 1100 - ns
- 56 - µm
-
-
-
-
-
-
-
-0.56
-0.4
-0.27
-24.5
-20
-18
-12
dB
-
-
-
-
-
-
-
3
Feb-04-2003
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