INFINEON BA592, BA892, BA892-02L, BA892-02V User Manual
Silicon RF Switching Diode
g
For band switching in TV/VTR tuners
and mobile applications
Very low forward resistance (typ. 0.45 @ 3 mA)
small capacitance
BA592
BA892/-02L
BA892-02V
BA592/BA892...
1 2
Type Package Configuration L
BA592
BA892
BA892-02L
BA892-02V
SOD323
SCD80
TSLP-2-1
SC79
single
single
single, leadless
single
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Diode reverse voltage V
Forward current I
Junction temperature T
Operating temperature range T
Storage temperature T
Symbol Value Unit
R
F
j
op
st
35 V
100 mA
150 °C
-55 ... 125
-55 ... 150
Thermal Resistance
(nH) Marking
S
1.8
0.6
0.4
0.6
blue S
AA
AA
A
Parameter
Junction - soldering point1)
BA592
BA892, BA892-02V
BA892-02L
1
For calculation of R
please refer to Application Note Thermal Resistance
thJA
Symbol Value Unit
R
thJS
1
135
120
70
Feb-04-2003
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
BA592/BA892...
Parameter
DC Characteristics
Reverse current
V
= 20 V
R
Forward voltage
I
= 100 mA
F
AC Characteristics
Diode capacitance
= 1 V, f = 1 MHz
V
R
V
= 3 V, f = 1 MHz
R
= 0 V, f = 100 MHz
V
R
Reverse parallel resistance
= 0 V, f = 100 MHz
V
R
Forward resistance
= 3 mA, f = 100 MHz
I
F
I
= 10 mA, f = 100 MHz
F
Symbol Values Unit
min. typ. max.
- - 20
- - 1 V
0.65
0.6
-
0.92
0.85
1
1.4
1.1
-
- 100 - k
-
-
0.45
0.36
0.7
0.5
nA
pF
C
R
r
I
V
R
F
T
P
f
Charge carrier life time
= 10 mA, IR = 6 mA, measured at IR = 3mA,
I
F
R
= 100
L
I-region width W
Insertion loss1)
= 0.1 mA, f = 1 GHz
I
F
I
= 3 mA, f = 1 GHz
F
= 10 mA, f = 1 GHz
I
F
Isolation1)
= 0 V, f = 100 MHz
V
R
V
= 0 V, f = 470 MHz
R
= 0 V, f = 1 GHz
V
R
1
BA892-02L in series configuration, Z = 50
|S21|
|S21|
rr
I
2
2
- 120 - ns
- 3 - µm
-
-
-
-
-
-
-0.1
-0.05
-0.04
-23.5
-10.5
-5.5
dB
-
-
-
-
-
-
2
Feb-04-2003
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