Infineon AN2011-05 Technical Information

Application Note AN 2011-05
V1.2 November 2015
AN2011-05 Industrial IGBT Modules Explanation of Technical Information
Industrial IGBT Modules
Application Note AN 2011-05
V1.2 November 2015
Edition 2011-09-30 Published by Infineon Technologies AG 59568 Warstein, Germany © Infineon Technologies AG 2011. All Rights Reserved.
Attention please!
THE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE IMPLEMEN­TATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE REGARDED AS ANY DESCRIPTION OR WARRANTY OF A CERTAIN FUNCTIONALITY, CONDITION OR QUALITY OF THE INFINEON TECHNOLOGIES COMPONENT. THE RECIPIENT OF THIS APPLICATION NOTE MUST VERIFY ANY FUNCTION DESCRIBED HEREIN IN THE REAL APPLICATION. INFINEON TECHNOLOGIES HEREBY DISCLAIMS ANY AND ALL WARRANTIES AND LIABILITIES OF ANY KIND (INCLUDING WITHOUT LIMITATION WARRANTIES OF NON-INFRINGEMENT OF INTELLECTUAL PROPERTY RIGHTS OF ANY THIRD PARTY) WITH RESPECT TO ANY AND ALL INFORMATION GIVEN IN THIS APPLICATION NOTE.
Information
For further information on technology, delivery terms and conditions and prices please contact your
nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the
types in question please contact your nearest Infineon Technologies Office. Infineon Technologies
Components may only be used in life-support devices or systems with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system, or to affect the safety or effectiveness of that device or system. Life
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and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or
other persons may be endangered.
AN 2011-05
Revision History: date (2015-09-11), V1.2
Previous Version: Rev. 1.1
Subjects: Rev. 1.1 revised
Update of Paragraph 3.7
Update of Paragraph 6.3
Update of Figure 11
Authors: Infineon Technologies AG
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will
help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [WAR-IGBT-Application@infineon.com]
Explanation of Technical Information
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Industrial IGBT Modules
Application Note AN 2011-05
V1.2 November 2015
Explanation of Technical Information
Table of contents
1 Abstract ........................................................................................................................................................ 4
2 Introduction .................................................................................................................................................. 4
2.1 Status of datasheets .......................................................................................................................... 6
2.2 Type designation ................................................................................................................................ 6
2.3 Module Label Code ............................................................................................................................ 9
3 Datasheet parameters IGBT ....................................................................................................................... 9
3.1 Collector - emitter voltage V
3.2 Total power dissipation P
3.3 DC Collector Current I
C nom
3.4 Repetitive peak collector current I
.......................................................................................................... 9
CES
................................................................................................................ 9
tot
............................................................................................................... 10
.............................................................................................. 10
CRM
3.5 Reverse bias safe operating area RBSOA ...................................................................................... 11
3.6 Typical output and transfer characteristics ...................................................................................... 11
3.7 Parasitic Capacitances .................................................................................................................... 13
3.8 Gate charge QG, gate current, internal and external gate resistor................................................... 15
3.9 Parasitic turn-on ............................................................................................................................... 16
3.10 Dynamic behavior ............................................................................................................................ 18
3.11 Short circuit ...................................................................................................................................... 20
3.12 Leakage currents I
CES
and I
........................................................................................................ 21
GES
3.13 Thermal characteristics .................................................................................................................... 21
4 Datasheet parameters Diode .................................................................................................................... 22
4.1 Diode forward characteristic ............................................................................................................ 22
4.2 Repetitive peak forward current ....................................................................................................... 23
4.3 I2t value ............................................................................................................................................ 23
4.4 Reverse recovery ............................................................................................................................. 23
5 Datasheet parameters NTC-thermistor ................................................................................................... 26
6 Datasheet parameters Module ................................................................................................................. 28
6.1 Insulation voltage ............................................................................................................................. 28
6.2 Stray inductance L .......................................................................................................................... 28
6.3 Module resistance R
6.4 Mounting torque M ........................................................................................................................... 30
7 Symbols and Terms .................................................................................................................................. 31
8 References ................................................................................................................................................. 33
............................................................................................................... 30
CC’+EE’
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Industrial IGBT Modules
Application Note AN 2011-05
V1.2 November 2015
Explanation of Technical Information
1 Abstract
The following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device. This Application Note is intended to provide an explanation of the parameters and diagrams given in the datasheet of industrial IGBT modules. With the Application Note, the designer of power electronic systems, requiring an IGBT module, is able to use the datasheet in a proper way and will be provided with background information.
2 Introduction
The parameters listed in the datasheet are values that describe the characteristics of the module as detailed as possible.
With this information, the designer should be able to compare devices from different suppliers to each other. Furthermore, the information should be sufficient to figure out the limits of the device.
This document explains the interaction between the parameters and the influence of conditions like temperature. Datasheet values that refer to dynamical characterization tests, e.g. switching losses, are related to a specific test setup with its individual characteristics. Therefore, these values can deviate from a user’s application.
The attached diagrams, tables and explanations are referring to the datasheet of a FS200R07N3E4R_B11 rev.2.0 from 2011-04-06 as an example. The values and characteristics shown are not necessarily feasible to be used for design-in activities. For the latest version of datasheets please refer to our website.
Infineon’s datasheets of IGBT power modules are structured as listed below:
Summarized device description on the front page as shown in Figure 1
Maximum rated electrical values of IGBT-chips
Recommended electrical operating conditions of IGBT-chips
Maximum rated electrical values of diode-chips
Recommended electrical operating conditions of diode-chips
NTC-Thermistor if applicable
Parameters concerning the overall module
Operating characteristics
Circuit diagram
Package outline
Terms and conditions of usage
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Industrial IGBT Modules
Application Note AN 2011-05
V1.2 November 2015
Explanation of Technical Information
Figure 1: Front page of the datasheet
There are also datasheets for older IGBT modules i.e. BSM100GAL120DLCK, where the front page as shown in Figure 1 does not exist.
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Industrial IGBT Modules
Application Note AN 2011-05
V1.2 November 2015
FS 200 07 N3 E4
B11
Module Topology
Current Rating
Chip Type
Construction variation
R
Functionality
Blocking Voltage
Mechanical construction
R
Particularity of the module
Explanation of Technical Information
2.1 Status of datasheets
Depending on the status of the product development, the relating technical information contains:
Target data
The numbers in these datasheets are target values, which are expected to be achieved. Values from these target datasheets are useful for the initial calculations and approximations. The information and values of a target datasheet cannot be guaranteed for the final product. The dimensioning of an inverter should only be done with values based on a preliminary or final datasheet.
During the development phase, the modules are labeled with their type designation and carry the suffix ENG. Modules with the ENG designation are supplied with a Sample Release Document. Important information can be taken from this additional Sample Release Document, e.g. which values of the module are already fixed and which values can still change during the development phase. ENG module samples are used for preliminary and functional tests during the early stages of a product development phase. Samples marked as ENG are not liable to Product Change Notification (PCN).
Preliminary data
The difference between a preliminary and a final datasheet is, that certain values are still missing, for example the maximum values. These missing values in the preliminary datasheet are marked to be defined (t.b.d.).
Modules without ENG on the label reached series production status. All quality requirements are completely fulfilled. If any major change to a module with series production status is necessary, customers must be informed by means of a PCN containing information about the type and extent as well as the time of the changes.
This also applies to modules that have preliminary datasheets.
Final data
The final datasheet is completed with the values which were missing in the preliminary datasheet. Major changes of module characteristics or changes in datasheet values in the series status are accompanied by a PCN.
2.2 Type designation
The first section of the datasheet begins with the type designation of the module as shown in Figure 2.
Figure 2: Structure of the type designation
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Industrial IGBT Modules
Application Note AN 2011-05
V1.2 November 2015
FS
200 R 07 N E 4 R
B11
Explanations
FF
Dual switch
FZ
Single switch
FS
3 phase full bridge
FP
Power integrated module
FB
Power integrated module with single phase input rectifier
FM
Matrix converter module
FR
Switched reluctance module
F4
H bridge
F5
Module with 5 switches
FD/ DF
Chopper configuration DD
Dual diode (for circuit see outline)
F3L
3-Level one leg IGBT module
FS3L
3-level 3 phase bridge
FT
Tripack
200 Max. DC-collector current
R
Reverse conducting
S
Fast diode
T
Reverse blocking
06
07
12
17
Collector-emitter-voltage in 100 V 07 denotes 650V
33
45
65 K
Mechanical construction: module
H
Package: IHM / IHV B-Series
I
Package: PrimePACK™
M
Econo DUAL™
N1..3
EconoPACK™1..3
O
EconoPACK™+
P
EconoPACK™4
U1..3
Package: Smart 1..3
V
Easy 750
W1.. 3
EasyPACK , EasyPIM™ 1..3 F
Fast switching IGBT chip
H
High speed IGBT chip
J
SiC JFET chip
L
Low Loss IGBT chip
S
Fast Short tail IGBT chip
E
Low Sat & fast IGBT chip
T
Fast trench IGBT
P
Soft switching trench IGBT
1..n
Internal reference numbers
C
With Emitter Controlled-Diode
D
Higher diode current
F
With very fast switching diode
G
Module in big housing
I
Integrated cooling
P
Pre-applied thermal interface material
R
Reduced numbers of pins
T
Low temperature type
-K Design with common cathode
B1..n
Construction variation
S1..n
Electrical selection
Explanation of Technical Information
The following tables give a detailed insight to the type designation of Infineon’s industrial IGBT Modules. As an example the FS200R07N3E4R_B11 is chosen.
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Industrial IGBT Modules
Application Note AN 2011-05
V1.2 November 2015
BSM
100
GB
120
DLx
Explanations
BSM
Switch with IGBT and FWD
BYM
Diode module
100
Max. DC-collector current (A)
GA
Single switch with one IGBT and FWD
GB
Half bridge
GD
3 phase full bridge
GT
3 single switches and FWD
GP
Power integrated module B6 / Break / Inverter
GAL
Chopper module ( diode on collector side)
GAR
Chopper module (diode on emitter side)
A
Single diode
120
Collector-emitter-voltage in 10V
DL
Typ with low V
CEsat
DN2
Fast switching type
DLC
Low loss type with Emitter Controlled-diode
S
With collector sense
G
Design variation
Exx
Special type
Designation of MIPAQ (Module Integrating Power, Application and Quality)
I
FS
150 B 12
N3 T 4 Explanations
I
MIPAQ family
FF
Dual switch
FZ
Single switch
FS
3 phase full bridge
FT
Tripack
FP
Power Integrated Module
150
Max. DC-collector current in A
B
With current sensor
S
With digital current measurement
V
With gate driver and temperature measurement
12
Collector-emitter-voltage in 100 V
N1..3
Package: EconoPACK™1..3
P
Package: EconoPACK™4
U1..3
Package: Smart1..3
S
Fast Short tail IGBT chip
E
Low Sat & fast IGBT chip
T
Thin IGBT
P
Soft switching IGBT chip
1..n
Internal reference numbers
B1..n
Construction variation
S1..n
Electrical selection
Explanation of Technical Information
BSM100GB120DLx as an Example for the old designation
Example for MIPAQ module IFS150B12N3T4
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Industrial IGBT Modules
Application Note AN 2011-05
V1.2 November 2015
(1) (1)
Explanation of Technical Information
2.3 Module Label Code
To facilitate the handling of the module from logistic’s and traceability point of view, all Infineon IGBT modules are considered as unique and labeled as represented in Figure 3. Each module can be identified with its material number, serial number, date code and lot number. All IGBT modules follow similar rules for labeling and identification. Bar code or DMX codes are given on the modules for automated identification. Test data are stored for eleven years.
Figure 3: Example of Module Label Code
3 Datasheet parameters IGBT
This section explains the electrical properties of the IGBT chip inside the given IGBT module. If one of these maximum ratings presented in the datasheet is exceeded, it may result in a breakdown of the
semiconductor, even if the other ratings are not stressed to their limits. Unless specified to the contrary, the values apply at a temperature of 25°C.
3.1 Collector - emitter voltage V
The permissible peak collector - emitter voltage is specified at a junction temperature of 25°C as seen in
Figure 4. This value decreases for lower temperatures with a factor of approximately .
Figure 4: Collector - emitter voltage of the IGBT
3.2 Total power dissipation P
This parameter as shown in Figure 5 describes the maximum feasible power dissipation through the thermal resistance junction to module case R
thJC
tot
.
CES
The total power dissipation can be calculated in general to be:
Figure 5: Maximum rating for P
9
tot
Industrial IGBT Modules
Application Note AN 2011-05
V1.2 November 2015
(2) (2)
(3) (3)
(4) (4)
Explanation of Technical Information
The considered IGBT module is an EconoPACK™ 3 with a base plate structure. The power dissipation is related to ∆T between junction and case and the thermal resistance R hinted out in equation (2).
At a case temperature of 25°C, the power dissipation is specified as a maximum value of:
The power dissipation of the diode chips can be calculated the same way as for the IGBTs, in accordance to equation(2).
between junction and case as
thJC
3.3 DC Collector Current IC
Based on the total power dissipation, the maximum permissible collector current rating of a module can be calculated with equation (4). Thus, in order to give a current rating of a module, the corresponding junction and case temperature has to be specified, as shown for example in Figure 6. Please note that current ratings without defined temperature conditions have no technical meaning at all.
Since IC is not known in equation (4), V The ratings of continuous DC-collector current are calculated using maximum values for V specified current rating, taking component tolerances into account.
3.4 Repetitive peak collector current I
The nominal current rating can be exceeded in an application for a short time. This is defined as repetitive peak collector current in the datasheet as can be seen in Figure 7 for the specified pulse duration. In theory, this value can be derived from the feasible power dissipation and the transient thermal impedance Zth, if the duration of the over current condition is defined. However, this theoretical value is not taking any limitations of bond wires, bus-bars or power connectors into account.
Therefore, the datasheet value is quite low compared to a calculated value based on theory, but it specifies a safe operation considering all practical limitations of the power module.
@ IC is also not known, but can be found within a few iterations.
CEsat
Figure 6: DC collector current
CRM
to ensure the
CEsat
Figure 7: Repetitive peak collector current
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