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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Darlington Power Transistor TIP130
DESCRIPTION
·High DC Current Gain= 1000(Min)@ I
: h
FE
·Collector-Emitter Sustaining Voltage-
: V
CEO(SUS)
= 60V(Min)
·Low Collector-Emitter Saturation Voltage-
: V
= 2.0V(Max)@ I
CE(sat)
·Complement to Type TIP135
APPLICATIONS
·Designed for general-purpose amplifier and low-speed
switching applications
ABSOLUTE MAXIMUM RATINGS(T
= 4A
C
= 4A
C
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CM
I
B
C
T
stg
Collector-Base Voltage 60 V
Collector-Emitter Voltage 60 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 8 A
Collector Current-Peak 12 A
B Base Current- Continuous 0.3 A
Collector Power Dissipation
@TC=25℃
Collector Power Dissipation
=25℃
@T
a
Junction Temperature 150
j
Storage Temperature Range -65~150
70
2
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
R
th j-c
th j-a
Thermal Resistance,Junction to Case 1.785
Thermal Resistance,Junction to Ambient 63.5
℃/W
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Darlington Power Transistor TIP130
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
V
CEO(SUS)
V
CE(sat)-1
V
CE(sat)-2
V
BE(on)
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE-2
Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0 60 V
Collector-Emitter Saturation Voltage IC= 4A; IB= 16mA B 2.0 V
Collector-Emitter Saturation Voltage IC= 6A, IB= 30mA B 3.0 V
Base-Emitter On Voltage IC= 4A; VCE= 4V 2.5 V
Collector Cutoff Current VCB= 60V, IE= 0 0.2 mA
Collector Cutoff Current VCE= 30V, IB= 0 0.5 mA
Emitter Cutoff Current VEB= 5V; IC= 0 5 mA
DC Current Gain IC= 1A; VCE= 4V 500
DC Current Gain IC= 4A; VCE= 4V 100 0 15000
isc Website：www.iscsemi.cn
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