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固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Darlington Power Transistors TIP120/121/122
DESCRIPTION
·With TO-220C package
·DARLINGTON
·High DC current gain
·Low collector saturation voltage
·Complement to type TIP125/126/127
APPLICATIONS
·Designed for general–purpose amplifier
and low–speed switching applications
PINNING
PIN DESCRIPTION
.
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Tc=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
TIP120 60
V
CBO
V
CEO
V
EBO
IC Collector current-DC 5 A
ICM Collector current-Pulse 8 A
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage Open collector 5 V
TIP121 80
TIP122
TIP120 60
TIP121 80
TIP122
Open emitter
Open base
V
100
V
100
IB Base current-DC 120 mA
PC Collector power dissipation
Tj Junction temperature 150 ℃
T
Storage temperature -65~150 ℃
stg
TC=25℃ 65
Ta=25℃
W
2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Darlington Power Transistors TIP120/121/122
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
TIP120 60
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
VBE Base-emitter on voltage IC=3.0A ; VCE=3V 2.5 V
I
CBO
I
CEO
Collector-emitter
sustaining voltage
Collector-emitter saturation voltage IC=3A ,IB=12mA 2.0 V
Collector-emitter saturation voltage IC=5A ,IB=20mA 4.0 V
Collector
cut-off current
Collector
cut-off current
TIP121 80
TIP122
TIP120 VCB=60V, IE=0
TIP121 VCB=80V, IE=0
TIP122 V
TIP120 VCE=30V, IB=0
TIP121 VCE=40V, IB=0
TIP122 V
IC=0.1A, IB=0
=100V, IE=0
CB
=50V, IB=0
CE
V
100
0.2 mA
0.5 mA
I
Emitter cut-off current VEB=5V; IC=0 2 mA
EBO
h
DC current gain IC=0.5A ; VCE=3V 1000
FE-1
h
DC current gain IC=3.0A ; VCE=3V 1000
FE-2
Cob Output capacitance IE=0 ; VCB=10V,f=0.1MHz 200 pF
2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Darlington Power Transistors TIP120/121/122
PACKAGE OUTLINE
3
Fig.2 Outline dimensions
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Darlington Power Transistors TIP120/121/122
4
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