INCHANGE Semiconductor
1
SYMBOL
PARAMETER
VALUE
UNIT
V
DSS
Drain-Source Voltage
600
V
VGSGate-Source Voltage-Continuous
±30
V
I
D
Drain Current-Continuous
7.4
A
IDMDrain Current-Single Plused
29.6
A
P
D
Total Dissipation @TC=25℃
142
W
T
j
Max. Operating Junction Temperature
150
℃
T
stg
Storage Temperature
-55~150
℃
SYMBOL
PARAMETER
MAX
UNIT
R
th j-c
Thermal Resistance, Junction to Case
0.88
℃/W
R
th j-a
Thermal Resistance, Junction to Ambient
62.5
℃/W
Product Specification
isc
isc N-Channel Mosfet Transistor 7N60B
·FEATURES
·Drain Current –ID= 7.4A@ TC=25℃
·Drain Source Voltage-
: V
= 600V(Min)
DSS
·Static Drain-Source On-Resistance
: R
·Avalanche Energy Specified
·Fast Switching
·Simple Drive Requirements
·DESCRITION
·Designed for high efficiency switch mode power supply.
= 1.2Ω(Max)
DS(on)
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
·THERMAL CHARACTERISTICS
isc website：www.iscsemi.com isc & iscsemi is registered trademark
INCHANGE Semiconductor
2
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V
(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
600
V
V
GS
(th
)
Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
24V
R
DS(on)
Drain-Source On-Resistance
VGS= 10V; ID= 3.7A
1.2
Ω
I
GSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
±100
nA
I
DSS
Zero Gate Voltage Drain Current
VDS= 600V; VGS= 0
10
μA
VSDForward On-Voltage
IS= 7.4A; VGS= 0
1.8
V
Product Specification
isc
isc N-Channel Mosfet Transistor 7N60B
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
·
isc website：www.iscsemi.com isc & iscsemi is registered trademark
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