Page 1
®
Jinglin
Qidong Jilai E lectronics Co., Ltd.
SEMICONDUCTOR TECHNICAL DATA
TIC246 series
TIC246 Series(16A TRIACS)
16A RMS
TO-220 PACKAGE
400V to 800V Off-State Voltage
Max I
AABBSSOOLLUUTTEE RRAATTIINNGG
Symbol Parameter Value Units
V
I
T(RMS)
of 50mA(Quadrant 1-3)
GT
Repetitive peak off-state voltage
DRM
Continuous on-state current at(or below) 70℃
case temperature
TIC246D
TIC246M
TIC246S
TIC246N
400
600
700
V
800
16 A
I
TSM
Peak on-state surge current full-sine-wave at (or
below)25℃ case temperature
IGM Peak gate current
TC Operating case temperature range
T
Storage temperature
stg
125 A
±1
A
-40～110 ℃
-40～125 ℃
Page 2
®
Jinglin
Qidong Jilai E lectronics Co., Ltd.
SEMICONDUCTOR TECHNICAL DATA TIC246 series
TTHHEERRMMAALL RREESSIISSTTAANNCCEE
Symbol Parameter Value Unit
Rth(j-c) Junction to case thermal resistance 1.9
Rtj(j-a) Junction to free air thermal resistance 62.5
5
EELLEECCTTRRIICCAALL CCHHAARRAACCTTEERRIISSTTIICCSS aatt 225
℃
℃
ccaassee tteemmppeerraattuurree
℃/W
℃/W
Symbol Testing conditions Min. Typ. Max. Unit
V
IGT
=+12V, RL=10Ω, t
supply
V
=+12V, RL=10Ω, t
supply
V
=-12V, RL=10Ω, t
supply
V
=-12V, RL=10Ω, t
supply
＞20μs
p(g)
＞20μs
p(g)
＞20μs
p(g)
＞20μs
p(g)
- 12 50
- -19 -50
mA
- -16 -50
- 34 -
VGT
IH
VTM
I
DRM
dv/dt
V
=+12V, RL=10Ω, t
supply
V
=+12V, RL=10Ω, t
supply
＞20μs
p(g)
＞20μs
p(g)
- 0.8 2
- -0.8 -2
V
V
=-12V, RL=10Ω, t
supply
V
=-12V, RL=10Ω, t
supply
V
=+12V, IG=0, Initiating IT=100mA
supply
＞20μs
p(g)
＞20μs
p(g)
- -0.8 -2
- 0.9 2
- 22 40
mA
V
=-12V, IG=0, Initiating IT=-100mA
supply
ITM=±22.5A， I
=ratedV
V
V
DRM
D
=rated V
DRM
=50mA
G
, IG=0, T
, IGT=50mA, T
DRM
=110℃
C
=110℃
C
- -12 -40
±1.4 ±2.1
-
- -
±100
-
±2
-
V/μs
V
mA
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