Page 1
®
Jinglin
Qidong Jilai E lectronics Co., Ltd.
SEMICONDUCTOR TECHNICAL DATA
TIC126 series
TIC126 Series(12A SCRS)
12A Continuous On-State Current
TO-220 PACKAGE
400V to 800V Off-State Voltage
Max I
AABBSSOOLLUUTTEE RRAATTIINNGG
Symbol Parameter Value Units
V
V
of 20mA
GT
Repetitive peak off-state voltage
DRM
Repetitive peak raverse voltage
RRM
TIC126D
TIC126M
TIC126S
TIC126N
TIC126D
TIC126M
TIC126S
TIC126N
400
600
700
800
400
600
700
800
V
V
I
T(RMS)
case temperature
12 A
Average on-state current(180℃ conduction
Continuous on-state current at(or below) 80℃
I
T(AV)
angle) at (or below) 80℃ case temperature
7.5 A
ITM Surge on-state current 100 A
IGM
PGM
P
G(AV)
TC Operating case temperature range
T
stg
Peak positive gate current(pulse width≤300μs)
Peak gate power dissipation(pulse width≤300μs)
3 A
5 W
Average gate power dissipation 1 W
-40～110 ℃
Storage temperature
-40～125 ℃
Page 2
®
Jinglin
Qidong Jilai E lectronics Co., Ltd.
SEMICONDUCTOR TECHNICAL DATA TIC126 series
TTHHEERRMMAALL RREESSIISSTTAANNCCEE
Symbol Parameter Value Unit
Rth(j-c) Junction to case thermal resistance 2.4
Rtj(j-a) Junction to free air thermal resistance 62.5
5
EELLEECCTTRRIICCAALL CCHHAARRAACCTTEERRIISSTTIICCSS aatt 225
℃
℃
ccaassee tteemmppeerraattuurree
℃/W
℃/W
Symbol Testing conditions Min. Typ. Max. Unit
IGT
VGT
VAA=6V, RL=100Ω, t
VAA=6V, RL=100Ω, TC=-40℃
≥20μs，R
t
p(g)
VAA=6V, RL=100Ω,
≥20μs，R
t
p(g)
GK
GK
≥20μs
p(g)
=1KΩ
=1KΩ
- 5 20 mA
- - 2.5
- 0.8 1.5
V
VAA=6V, RL=100Ω, TC=110℃
t
p(g)
VAA=6V, R
Initiating I
IH
VAA=6V, R
Initiating I
VTM I
V
V
VD=rated VD, RGK=1KΩ, T
dv/dt
I
DRM
I
RRM
≥20μs，R
=1KΩ, T
GK
=100mA
T
=1KΩ
GK
=-40℃
C
0.2 - -
- - 70
mA
=1KΩ,
GK
=100mA
T
=12A - - 1.4 V
TM
=ratedV
D
=ratedV
R
, RGK=1KΩ, T
DRM
, IG=0, TC=110℃
RRM
=110℃
C
=110℃
C
- - 40
- - 2 mA
- - 2 mA
- 100 -
V/μs
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