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INCHANGE Semiconductor isc Product Specification
isc Thyristors TIC116M
APPLICATIONS
·8A contimunous on-state current
·80A surge-current
·Glass passivated
·Max I
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER MIN UNIT
V
V
I
T(AV)
I
T(RMS)
I
P
P
G(AV)
of 20mA
GT
=25℃)
a
DRM
RRM
TM
GM
Repetitive peak off-state voltage 600
Repetitive peak reverse voltage 600 V
On-state current Tc=80℃
RMS on-state current Tc=80℃
5 A
8 A
Surge peak on-state current 80 A
Peak gate power PW≤300μs
5 W
Average gate power 1 W
Tj Operating Junction temperature 110
V
℃
T
Storage temperature -40 ~+125
stg
R
Thermal resistance, junction to case 3
th(j-c)
R
Thermal resistance, junction to ambient 62.5
th(j-a)
℃
℃/W
℃/W
ELECTRICAL CHARACTERISTICS (T
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
RRM
I
DRM
Repetitive peak reverse current
Repetitive peak off-state current
=25℃ unless otherwise specified)
C
VRM=V
VRM=V
, Tj=110℃
RRM
, Tj=110℃
RRM
2.0 mA
2.0 mA
VTM On-state voltage ITM= 8A 1.7 V
IGT Gate-trigger current
VGT Gate-trigger voltage
IH Holding current
V
AA
=6V; RL=100Ω
V
AA
=6V; RGK=1kΩ,IT=100mA
V
AA
20 mA
1.5 V
40 mA
=6V; RL=100Ω
isc website：www.iscsemi.cn
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