®
Jinglin
Qidong Jilai E lectronics Co., Ltd.
SEMICONDUCTOR TECHNICAL DATA
TIC106 series
TIC106 Series(5A SCRS)
5A Continuous On-State Current
TO-220 PACKAGE
400V to 800V Off-State Voltage
Max I
AABBSSOOLLUUTTEE RRAATTIINNGG
Symbol Parameter Value Units
V
V
of 200μA
GT
Repetitive peak off-state voltage
DRM
Repetitive peak raverse voltage
RRM
TIC106D
TIC106M
TIC106S
TIC106N
TIC106D
TIC106M
TIC106S
TIC106N
400
600
700
800
400
600
700
800
V
V
I
T(RMS)
case temperature
5 A
Average on-state current(180℃ conduction
Continuous on-state current at(or below) 80℃
I
T(AV)
angle) at (or below) 80℃ case temperature
3.2 A
ITM Surge on-state current 30 A
IGM
PGM
P
G(AV)
TC Operating case temperature range
T
stg
Peak positive gate current(pulse width≤300μs)
Peak gate power dissipation(pulse width≤300μs)
0.2 A
1.3 W
Average gate power dissipation 0.3 W
-40～110 ℃
Storage temperature
-40～125 ℃
®
Jinglin
Qidong Jilai E lectronics Co., Ltd.
SEMICONDUCTOR TECHNICAL DATA TIC106 series
TTHHEERRMMAALL RREESSIISSTTAANNCCEE
Symbol Parameter Value Unit
Rth(j-c) Junction to case thermal resistance 3.5
Rtj(j-a) Junction to free air thermal resistance 62.5
5
EELLEECCTTRRIICCAALL CCHHAARRAACCTTEERRIISSTTIICCSS aatt 225
℃
℃
ccaassee tteemmppeerraattuurree
℃/W
℃/W
Symbol Testing conditions Min. Typ. Max. Unit
IGT
VGT
VAA=6V, RL=100Ω, t
VAA=6V, RL=100Ω, TC=-40℃
≥20μs，R
t
p(g)
VAA=6V, RL=100Ω,
≥20μs，R
t
p(g)
GK
GK
≥20μs
p(g)
=1KΩ
=1KΩ
- 60 200
- - 1.2
0.4 0.6 1
μA
V
VAA=6V, RL=100Ω, TC=110℃
t
p(g)
VAA=6V, R
Initiating I
IH
VAA=6V, R
Initiating I
VTM I
V
V
VD=rated VD, RGK=1KΩ, T
dv/dt
I
DRM
I
RRM
≥20μs，R
=1KΩ, T
GK
=10mA
T
=1KΩ
GK
=-40℃
C
0.2 - -
- - 8
mA
=1KΩ,
GK
=10mA
T
=5A - - 1.7 V
TM
=ratedV
D
=ratedV
R
, RGK=1KΩ, T
DRM
, IG=0, TC=110℃
RRM
=110℃
C
=110℃
C
- - 5
- - 400
μA
- - 1 mA
- 10 -
V/μs
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