Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors MJ15023 MJ15025
DESCRIPTION
·With TO-3 package
·Complement to type MJ15022; MJ15024
·Excellent safe operating area
·High DC current gain
= 15 (Min) @ IC = 8 Adc
h
FE
APPLICATIONS
·Designed for high power audio, disk head
positioners and other linear applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current -16 A
ICM Collector current-peak -30 A
IB Base current -5 A
PD Total power dissipation TC=25℃ 250 W
Tj Junction temperature 150 ℃
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage Open collector --5 V
MJ15023 -350
MJ15025
MJ15023 -200
MJ15025
Open emitter
Open base
-400
V
V
-250
T
Storage temperature -65~200 ℃
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance junction to case 0.70 ℃/W
th j-c
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors MJ15023 MJ15025
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
VBE Base-emitter on voltage IC=-8A ; VCE=-4V -2.2 V
I
CEO
I
CEX
I
EBO
h
FE-1
h
FE-2
Collector-emitter
sustaining voltage
Collector-emitter saturation voltage IC=-8A; IB=-0.8A -1.4 V
Collector-emitter saturation voltage IC=-16A; IB=-3.2A -4.0 V
Collector
cut-off current
Collector
cut-off current
Emitter cut-off current VEB=-5V; IC=0 -0.5 mA
DC current gain IC=-8A ; VCE=-4V 15 60
DC current gain IC=-16A ; VCE=-4V 5
MJ15023 -200
IC=-0.1A ;IB=0
MJ15025
MJ15023 VCE=-150V; IB=0
MJ15025 V
MJ15023 VCE=-200V; V
MJ15025 V
=-200V; IB=0
CE
=-250V; V
CE
BE(off)
BE(off)
-250
-0.5 mA
=-1.5V
-0.25 mA
=-1.5V
V
I
s/b
COB Output capacitance IE=0 ; VCB=-10V;f=1.0MHz 600 pF
fT Transition frequency IC=-1A ; VCE=-10V;f=1.0MHz 4 MHz
Second breakdown collector
current with base forward biased
2
V
=-50Vdc,t=0.5 s,
CE
V
=-80Vdc,t=0.5 s,Nonrepetitive
CE
-5.0
-2.0
A
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors MJ15023 MJ15025
PACKAGE OUTLINE
3
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
Loading...