INCHANGE MJ 11016 ISC Datasheet

Page 1
INCHANGE Semiconductor
1
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
120
V
V
CEO
Collector-Emitter Voltage
120
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current-Continunous
30
A
I
B
Base Current-Continunous
1
A
P
C
Collector Power Dissipation @TC=25
200
W
T
j
Junction Temperature
200
T
stg
Storage Temperature Range
-55~+200
SYMBOL
PARAMETER
MAX
UNIT
R
th j-c
Thermal Resistance, Junction to Case
0.87
/W
isc
Silicon NPN Darlington Power Transistor

DESCRIPTION

·Collector-Emitter Breakdown Voltage
: V
(BR)CEO
= 120V(Min.)
·High DC Current Gain-
: hFE= 1000(Min.)@IC= 20A
·Low Collector Saturation Voltage-
: V
= 3.0V(Max.)@ IC= 20A
CE (sat)
·Complement to the PNP MJ11015
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

APPLICATIONS

·Designed for use as output devices in complementary
general purpose amplifier applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25)

THERMAL CHARACTERISTICS
isc website:www.iscsemi.com isc & iscsemi is registered trademark
Page 2
INCHANGE Semiconductor
2
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 50mA; IB= 0
120
V
V
CE
(sat)-1
Collector-Emitter Saturation Voltage
IC= 20A; IB= 0.2A
3.0
V
V
CE
(sat)-2
Collector-Emitter Saturation Voltage
IC= 30A; IB= 0.3A
4.0
V
V
BE
(sat)-1
Base-Emitter Saturation Voltage
IC= 20A; IB= 0.2A
3.5
V
V
BE
(sat)-2
Base-Emitter Saturation Voltage
IC= 30A; IB= 0.3A
5.0
V
I
CBO
Collector Cutoff Current
VCB=120V; IE=0 VCB=120V;IE=0; TC=150
1.0
5.0
mA
I
CEO
Collector Cutoff Current
VCE= 120V; IB= 0
1.0
mA
I
EBO
Emitter Cutoff Current
VEB= 5V; IC= 0
5.0
mA
h
FE-1
DC Current Gain
IC= 20A, VCE= 5V
1000
h
FE-2
DC Current Gain
IC= 30A, VCE= 5V
200
isc
Silicon NPN Darlington Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25unless otherwise specified
isc website:www.iscsemi.com isc & iscsemi is registered trademark
Page 3
INCHANGE Semiconductor
3
isc
Silicon NPN Darlington Power Transistor
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
isc website:www.iscsemi.com isc & iscsemi is registered trademark
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