INCHANGE BUX 80 ISC Datasheet

固电半导体

INCHANGE SEMICONDUCTOR

Inchange Semiconductor Product Specification

Silicon NPN Power Transistors BUX80

DESCRIPTION ·

·With TO-3 package

·High voltage

·Fast switching speed

APPLICATIONS

·Switching regulators

·Motor control

·High frequency and efficiency converters

PINNING(see fig.2)

PIN DESCRIPTION

1

2 Emitter

3 Collector

Base

Fig.1 simplified outline (TO-3) and symbol

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER CONDITIONS VALUE UNIT

V

CBO

V

CEO

V

EBO

IC Collector current 10 A

ICM Collector current-peak 15 A

IB Base current 5 A

PT Total power dissipation

Tj Junction temperature 150

Collector-base voltage Open emitter 800 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 10 V

T

=25℃

C

100 W

℃

T

Storage temperature -65~150

stg

THERMAL CHARACTERISTICS

SYMBOL PARAMETER MAX UNIT

R

Thermal resistance junction to case 1.1 ℃/W

th j-C

℃

固电半导体

INCHANGE SEMICONDUCTOR

Inchange Semiconductor Product Specification

Silicon NPN Power Transistors BUX80

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V

CEO(SUS)

V

CEsat-1

V

CEsat-2

V

BEsat-1

V

BEsat-2

I

CES

I

EBO

hFE DC current gai n IC=1.2A ; VCE=5V 30

Switching times

ton Turn-on time 0.5

Collector-emitter sustaining voltage IC=0.1A; IB=0 400 V

Collector-emitter saturation voltage IC=5 A;IB=1 A 1.5 V

Collector-emitter saturation voltage IC=8 A;IB=2.5 A 3.0 V

Base-emitter saturation voltage IC=5 A;IB=1 A 1.4 V

Base-emitter saturation voltage IC=8 A;IB=2.5 A 1.8 V

=800V;VBE=0

V

Collector cut-off current

Emitter cut-off current VEB=10V; IC=0 10 mA

CE

TC=125℃

1.0

3.0

mA

μs

ts Storage time 3.5

tf Fall time

2

=5A ;IB1=1A; IB2=-2A

I

C

V

=-250V

CC

μs

0.5

μs

固电半导体

INCHANGE SEMICONDUCTOR

Inchange Semiconductor Product Specification

Silicon NPN Power Transistors BUX80

PACKAGE OUTLINE

Fig.2 Outline dimensions

3