Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors BUF405A
DESCRIPTION ·
·With TO-220C package
·High voltage,high speed
APPLICATIONS
·Switch mode power supplies
·Motor drivers
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 7.5 A
ICM Collector current-Peak tp<5ms 15 A
IB Base current (DC) 3 A
IBM Base current-Peak tp<5ms 4.5 A
P
tot
Collector-base voltage Open emitter 1000 V
Collector-emitter voltage Open base 450 V
Emitter-base voltage Open collector 7 V
Total power dissipation TC=25℃ 80 W
Tj Maximum operating junction temperature 150 ℃
T
Storage temperature -65~150 ℃
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-case
Thermal resistance junction to case 1.56
℃/W
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors BUF405A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)EBO
V
CEsat-1
V
CEsat-2
V
BEsat-1
V
BEsat-2
I
CEV
I
EBO
Collector-emitter sustaining voltage IC=200mA ; IB=0; L=25mH 450 V
Emitter-base breakdwon voltage IE=50mA ;IC=0 7 V
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
=2.5A; IB=0.25A
C
=100℃
T
C
I
=5A ;IB=1A
C
=100℃
T
C
I
=2.5A; IB=0.25A
C
=100℃
T
C
I
=5A ;IB=1A
C
TC=100℃
V
=1000V; VBE=-1.5V
CE
TC=100℃
0.8
0.5
0.9
1.1
2.8
2.0
1.5
1.5
100
500
V
V
V
V
μA
I
Emitter cut-off current VEB=5V; IC=0 1 mA
Switching times inductive load
ts Storage time 0.8 μs
tf Fall time
=2.5A ;VCC=50V
I
C
I
=0.25A;VBB=-5V ;L=1mH
B1
RBB=2.4Ω;V
clamp
=400V
0.05 μs
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors BUF405A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: 0.1mm)
3
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