INCHANGE BU 2525DF ISC Datasheet

Inchange Semiconductor Product Specification

固电半导体

INCHANGE SEMICONDUCTOR

Silicon NPN Power Transistors BU2525DF

DESCRIPTION

·With TO-3PFa package

·High voltage

·High speed switching

·Built-in damper diode

APPLICATIONS

·For use in horizontal deflection circuits
of large screen colour TV receivers

PINNING

PIN DESCRIPTION

1

2 Collector

3 Emitter

Base

Absolute maximum ratings(Ta=25

SYMBOL PARAMETER CONDITIONS VALUE UNIT

V

CBO

V

CEO

V

EBO

IC Collector current (DC) 12 A

ICM Collector current -peak 30 A

IB Base Collector current (DC) 8 A

Collector-base voltage Open emitter 1500 V

Collector-emitter voltage Open base 800 V

Emitter-base voltage Open collector 7.5 A

℃)

IBM Base current -peak 12 A

T

P

Total power dissipation

tot

Tj Junction temperature 150

T

Storage temperature -65~150

stg

=25℃

C

45 W

℃

℃

Inchange Semiconductor Product Specification

固电半导体

INCHANGE SEMICONDUCTOR

Silicon NPN Power Transistors BU2525DF

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V

CEO(SUS)

V

(BR)EBO

V

CEsat

V

BEsat

I

CES

I

EBO

h

FE-1

h

FE-2

VF Diode forward voltage IF=8A 1.6 2.0 V

CC Collector capacitance IE=0, f=1MHz;VCB=10V 145 pF

Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 800 V

Emitter-base breakdown voltage IE=600mA ;IC=0 7.5 13.5 V

Collector-emitter saturation voltage IC=8A ;IB=1.6 A 5.0 V

Base-emitter saturation voltage IC=8A ;IB=1.6 A 1.1 V

=BV

V

CE

Collector cut-off current

Emitter cut-off current VEB=6V; IC=0 72 110 218 mA

DC current gain IC=1.0A ; VCE=5V 11

DC current gain IC=8A ; VCE=5V 5 7 9.5

T

=125℃

j

CES; VBE

=0

1.0

2.0

mA

2

Inchange Semiconductor Product Specification

固电半导体

INCHANGE SEMICONDUCTOR

Silicon NPN Power Transistors BU2525DF

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)

3