Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors BU1508AX
DESCRIPTION
·With TO-220F package
·High voltage
·High speed switching
APPLICATIONS
·For use in horizontal deflection circuits
of colour TV receivers.
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 8 A
ICM Collector current (peak) 15 A
IB Base current 4 A
IBM Base current (peak) 6 A
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 700 V
Emitter-base voltage Open collector 7.5 V
℃)
T
PT Total power dissipation
Tj Junction temperature 150
T
Storage temperature -65~150
stg
=25℃
C
35 W
℃
℃
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors BU1508AX
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)EBO
V
CEO(SUS)
V
CEsat
V
BEsat
I
CES
I
EBO
h
FE-1
h
FE-2
CC Collector output capacitance IE=0;f=1MHz;VCB=10V 80 pF
Emitter-base breakdown voltage IE=1mA ;IC=0 7.5 13.5 V
Collector-emitter sustaining voltage IC=100mA ;IB=0;L=25mH 700 V
Collector-emitt er saturation voltage IC=4.5A; IB=1.1A 1.0 V
Base-emitter saturation voltage IC=4.5A; IB=1.7A 1.1 V
=rated;VBE=0
V
Collector cut-off current
Emitter cut-off current VEB=7.5V; IC=0 1.0 mA
DC current gain IC=0.1A ; VCE=5V 13
DC current gain IC=4.5A ; VCE=1V 4.0 5.5 7.0
CE
T
=125℃
j
1.0
2.0
mA
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors BU1508AX
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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