Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors BD744/A/B/C
DESCRIPTION ·
·With TO-220C package
·Complement to type BD743/A/B/C
·High current capability
·High power dissipation
APPLICATIONS
·For use in power linear and
switching applications
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
BD744 -50
V
Collector-base voltage
CBO
V
Collector-emitter voltage
CEO
V
Emitter-base voltage Open collector -5 V
EBO
BD744A -70
BD744B -90
BD744C
BD744 -45
BD744A -60
BD744B -80
BD744C
Open emitter
Open base
V
-1 10
V
-100
IC Collector current -15 A
ICM Collector current-peak -20 A
IB Base current -5 A
PC Collector power dissipation
Tj Junction temperature 150 ℃
T
Storage temperature -65~150 ℃
stg
TC=25℃ 90
T
=25℃ 2
a
W
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors BD744/A/B/C
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
BD744 -45
V
(BR)CEO
V
CEsat-1
V
CEsat-2
V
BE -1
V
BE -2
Collector-emitter
breakdown voltage
Collector-emitter saturation voltage IC=-5 A;IB=-0.5 A -1.0 V
Collector-emitter saturation voltage IC=-15 A;IB=-5 A -3.0 V
Base-emitter on voltage IC=-5A ; VCE=-4V -1.0 V
Base-emitter on voltage IC=-15A ; VCE=-4V -3.0 V
BD744A -60
I
=-30mA; IB=0
C
V
BD744B -80
BD744C
-100
BD744/A VCE=-30V; IB=0
I
Collector cut-off current
CEO
-0.1 mA
BD744B/C VCE=-60V; IB=0
V
I
Collector cut-off current
CBO
BD744
BD744A
BD744B
BD744C
=-50V; VBE=0
CE
TC=125℃
V
=-70V; VBE=0
CE
TC=125℃
V
=-90V; VBE=0
CE
=125℃
T
C
V
=-110V; VBE=0
CE
TC=125℃
-0.1
-5.0
-0.1
-5.0
-0.1
-5.0
-0.1
-5.0
mA
I
Emitter cut-off current VEB=-5V; IC=0 -0.5 mA
EBO
h
DC current gain IC=-1A ; VCE=-4V 40
FE-1
h
DC current gain IC=-5A ; VCE=-4V 20 150
FE-2
h
DC current gain IC=-15A ; VCE=-4V 5
FE-3
Switching times resistive load
td Delay time 0.02 μs
tr Rise time 0.12 μs
ts Storage time 0.6 μs
tf Fall time
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
T hermal resistance junctio n to case 1.40
th j-c
2
IC=-5 A;IB1=-IB2=-0.5 A
V
=4.2V; RL=6Ω
BE(off)
tp=20μs
0.3 μs
℃/W
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors BD744/A/B/C
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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