IFET DPAD5, DPAD2, DPAD10, DPAD1 Datasheet

C-2 01/99

DPAD1, DPAD2, DPAD5, DPAD10

Dual Pico-AMP Diode

¥ High Impedance Protection

Circuits

At 25°C free air temperature:

Electrical Characteristics

Reverse Current I
Breakdown Reverse Voltage BV
Forward Voltage Drop V
Capacitance C
Differential Capacitance |CR1– CR2| 0.2 0.2 pF VR1= VR2=– 5 V f = 1 MHz

At 25°C free air temperature:

Electrical Characteristics

Reverse Current I
Breakdown Reverse Voltage BV
Forward Voltage Drop V
Capacitance C
Differential Capacitance |CR1– CR2| 0.2 0.2 pF VR1= VR2=– 5 V f = 1 MHz

R

R

F

R

R

R

F

R

Min Typ Max Min Typ Max Unit Test Conditions

– 45 – 45 V IR= – 1 µA

Min Typ Max Min Typ Max Unit Test Conditions

– 45 – 45 V IR= – 1 µA

Absolute maximum ratings at TA= 25¡C

Continuous Forward Gate Current 50 mA
Storage Temperature Range – 55°C to +125°C

DPAD1 DPAD2 Process NJ01

– 1 – 2 pA VR= – 20V

0.8 1.5 0.8 1.5 V IF= 5 mA

0.8 0.8 pF VR= – 5 V f = 1 MHz

DPAD5 DPAD10 Process NJ01

– 5 – 10 pA VR= – 20V

0.8 1.5 0.8 1.5 V IF= 5 mA

0.8 2.0 pF VR= – 5 V f = 1 MHz

1000 N. Shiloh Road, Garland, TX 75042
[phone] FAX [phone]

TOÐ72 Package

Dimensions in Inches (mm)

Pin Configuration

1 Cathode 1, 2 Anode 1,
3 Cathode 2, 4 Anode 2

Surface Mount
SOIC-8 Package

See Section G

Pin Configuration

1 Cathode 1, 2 Cathode 1, 3 Anode 1,
4 N/C, 5 Cathode 2, 6 Cathode 2,
7 Anode 2, 8 N/C

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