IFET 2N6550 Datasheet

01/99 B-27

2N6550

N-Channel Silicon Junction Field-Effect Transistor

¥ Low-Noise, High Gain Amplifier

At 25°C free air temperature: 2N6550 Process NJ450L
Static Electrical Characteristics Min Typ Max Unit Test Conditions

Gate Source Breakdown Voltage V
Gate Leakage Current I

Zero Gate Voltage Drain Current (Pulsed) I

Gate Source Cutoff Voltage V

Dynamic Electrical Characteristics

Transconductance g
Common Source Output Conductance |Yos| 150 µS VDS= 10V, ID= 10 mA f = 1 kHz
Common Source Input Capacitance C

Common Source Reverse Transfer Capacitance C

Equivalent Short Circuit
Input Noise Voltage

Equivalent Open Circuit Input Noise Current

(BR)GSS

GSS

DSS

GS(OFF)

fs

iss
rss

¯e

N

¯eNT otal 0.4 0.6 µVrms VDS= 5V, ID= 10 mA
¯

i

N

Absolute maximum ratings at TA=25¡C

Reverse Gate Source & Reverse Gate Drain Voltage – 20 V
Continuious Forward Gate Current 50 mA
Continuous Device Power Dissipation 400 mW
Power Derating 2.3 mW/°C
Junction Temperature (Operating & Storage) – 65°C to +200°C

– 20 V IG= 10 µA, VDS= ØV

– 3 nA VGS= – 10V, VDS= ØV

– 0.1 µA VGS= – 10V, VDS= ØV TA= 85°C

10 100 250 mA VDS= 10V, VGS= ØV

– 0.3 – 3 V VDS= 10V, ID= 0.1 mA

25 150 mS VDS= 10V, ID= 10 mA f = 1 kHz

30 35 pF VDS= 10V, ID= 10 mA f = 140 kHz
10 20 pF VDS= 10V, VDS= ØV f = 140 kHz

1.4 2 nV/√Hz VDS= 5V, ID= 10 mA f = 1 kHz

610

0.1 pA/√Hz RS< 100 KΩ f = 1 kHz

nV/√Hz

VDS= 5V, ID= 10 mA f = 10 Hz

f = 10 kHz
to 20 kHz

TOÐ46 Package

Dimensions in Inches (mm)

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Pin Configuration

1 Drain, 2 Source, 3 Gate & Case

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