IFET 2N6454, 2N6453 Datasheet
B-26 01/99
2N6453, 2N6454
N-Channel Silicon Junction Field-Effect Transistor
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At 25°C free air temperature: 2N6453 2N6454 Process NJ132L
Static Electrical Characteristics Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V
Gate Reverse Current I
Gate Source Cutoff Voltage V
Drain Saturation Current (Pulsed) I
Dynamic Electrical Characteristics
Common Source
Forward Transmittance
Common Source
Output Conductance
Common Source
Input Capacitance
Common Source Reverse
Transfer Capacitance
Equivalent Short Circuit
Input Noise Voltage
Noise Figure NF 1.5 2.5 dB
(BR)GSS
GSS
GS(OFF)
DSS
| Y
fs
| Y
os
C
iss
C
rss
¯e
N
|
|
Absolute maximum ratings at TA= 25¡C
2N6453 2N6454
Reverse Gate Source Voltage – 20 V – 25 V
Reverse Gate Drain Voltage – 20 V – 25 V
Continuous Forward Gate Current 10 mA 10 mA
Continuous Device Power Dissipation 360 mW 360 mW
Power Derating 2.88 mW/°C 2.88 mW/°C
– 20 – 25 V IG= – 1 µA, VDS= ØV
– 0.1 nA VGS= – 10V, VDS= ØV
– 0.5 nA VGS= – 15V, VDS= ØV
– 0.2 µA VGS= – 10V, VDS= ØV TA= 125°C
– 1 µA VGS= – 15V, VDS= ØV TA= 125°C
– 0.75 – 5 – 0.75 – 5 V VDS= 10V, ID= 0.5 nA
15 50 15 50 mA VDS= 10V, VGS= ØV
mS VDS= 10V, ID= 5 mA f = 1 kHz
20 40 20 40 mS VDS= 10V, ID= 15 mA f = 1 kHz
µS VDS= 10V, ID= 5 mA f = 1 kHz
100 100 µS VDS= 10V, ID= 15 mA f = 1 kHz
pF VDS= 10V, ID= 5 mA f = 1 kHz
25 25 pF VDS= 10V, ID= 15 mA f = 1 kHz
pF VDS= 10V, ID= 5 mA f = 1 kHz
55pFV
5 10 nV/√Hz VDS= 10V, ID= 5 mA f = 10 kHz
3 8 nV/√Hz VDS= 10V, ID= 5 mA f = 1 kHz
= 10V, ID= 15 mA f = 1 kHz
DS
VDS= 10V,
RG= 10 kΩ
ID= 5 mA
f = 10 Hz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
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