IFET 2N6452, 2N6451 Datasheet
01/99 B-25
2N6451, 2N6452
N-Channel Silicon Junction Field-Effect Transistor
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At 25°C free air temperature: 2N6451 2N6452 Process NJ132L
Static Electrical Characteristics Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V
Gate Reverse Current I
Gate Source Cutoff Voltage V
Drain Saturation Current (Pulsed) I
Dynamic Electrical Characteristics
Common Source
Forward Transmittance
Common Source
Output Conductance
Common Source
Input Capacitance
Common Source Reverse
Transfer Capacitance
Equivalent Short Circuit
Input Noise Voltage
Noise Figure NF 1.5 2.5 dB
(BR)GSS
GSS
GS(OFF)
DSS
| Y
fs
| Y
os
C
iss
C
rss
¯e
N
|
|
Absolute maximum ratings at TA= 25¡C
2N6451 2N6452
Reverse Gate Source Voltage – 20 V – 25 V
Reverse Gate Drain Voltage – 20 V – 25 V
Continuous Forward Gate Current 10 mA 10 mA
Continuous Device Power Dissipation 360 mW 360 mW
Power Derating 2.88 mW/°C 2.88 mW/°C
– 20 – 25 V IG= – 1 µA, VDS= ØV
– 0.1 nA VGS= – 10V, VDS= ØV
– 0.5 nA VGS= – 15V, VDS= ØV
– 0.2 µA VGS= – 10V, VDS= ØV TA= 125°C
– 1 µA VGS= – 15V, VDS= ØV TA= 125°C
– 0.5 – 3.5 – 0.5 – 3.5 V VDS= 10V, ID= 0.5 nA
520520mAVDS= 10V, VGS= ØV
15 30 15 30 mS VDS= 10V, ID= 5 mA f = 1 kHz
mS VDS= 10V, ID= 15 mA f = 1 kHz
50 50 µS VDS= 10V, ID= 5 mA f = 1 kHz
µS VDS= 10V, ID= 15 mA f = 1 kHz
25 25 pF VDS= 10V, ID= 5 mA f = 1 kHz
pF VDS= 10V, ID= 15 mA f = 1 kHz
55pFV
pF VDS= 10V, ID= 15 mA f = 1 kHz
510nV/√Hz VDS= 10V, ID= 5 mA f = 10 kHz
38nV/√Hz VDS= 10V, ID= 5 mA f = 1 kHz
= 10V, ID= 5 mA f = 1 kHz
DS
VDS= 10V,
RG= 10 kΩ
ID= 5 mA
f = 10 Hz
TOÐ72 Package
Dimensions in Inches (mm)
www.interfet.com
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
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