IFET 2N6450, 2N6449 Datasheet

B-24 01/99

2N6449, 2N6450

N-Channel Silicon Junction Field-Effect Transistor

¥ High Voltage

At 25°C free air temperature: 2N6449 2N6450 Process NJ42
Static Electrical Characteristics Min Max Min Max Unit Test Conditions

Gate Source Breakdown Voltage V

Gate Reverse Current I

Gate Source Cutoff Voltage V
Drain Saturation Current (Pulsed) I

Dynamic Electrical Characteristics

Common Source Forward
Transfer Admittance

(BR)GSS

GSS

GS(OFF)

DSS

Y

fs

Absolute maximum ratings at TA= 25¡C

2N6449 2N6450
Reverse Gate Source Voltage – 300 V – 200 V
Reverse Gate Drain Voltage – 300 V – 200 V
Continuous Forward Gate Current 10 mA 10 mA
Continuous Device Power Dissipation 800 mW 800 mW
Power Derating 6.4 mW/°C 6.4 mW/°C

– 300 – 200 V IG= – 10 µA, VDS= ØV

– 100 nA VGS= – 150V, VDS= ØV

– 100 nA VGS= – 100V, VDS= ØV

– 100 µA VGS= – 150V, VDS= ØV TA= 150°C

– 100 µA VGS= – 100V, VDS= ØV TA= 150°C

– 2 – 15 – 2 – 15 V VDS= 30V, ID= 4 nA

210210mAVDS= 30V, VGS= ØV

0.5 3 0.5 3 mS VDS= 30V, VGS= ØV f = 1 kHz

Common Source Output Conductance Y
Common Source Input Capacitance C

Common Source
Reverse Transfer Capacitance

os
iss

C

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100 100 µS VDS= 30V, VGS= ØV f = 1 kHz

20 20 pF VDS= 30V, VGS= ØV f = 1 MHz

2.5 2.5 pF VDS= 30V, VGS= ØV f = 1 MHz

TOÐ39 Package

Dimensions in Inches (mm)

Pin Configuration

1 Source, 2 Drain, 3 Gate & Case

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