IFET 2N5912, 2N5911 Datasheet

01/99 B-23

2N5911, 2N5912

Dual N-Channel Silicon Junction Field-Effect Transistor

Absolute maximum ratings at TA= 25¡C

Continuous Forward Gate Current 50 mA
Total Device Power Dissipation 500 mW
Power Derating 4 mW°C
Storage Temperature Range –65°C to + 200°C

SOIC-8 Package

See Section G for Outline Dimensions

Pin Configuration

1 Source 1, 2 Drain 1, 3 Gate 1, 4 N/C,
5 Source 2, 6 Drain 2, 7 Gate 2, 8 Omitted

TOÐ78 Package

See Section G for Outline Dimensions

Pin Configuration

1 Source 1, 2 Drain 1, 3 Gate 1,
4 Case, 5 Source 2, 6 Drain 2,
7 Gate 2, 8 Omitted

Surface Mount

SMP5911, SMP5912

At 25°C free air temperature: 2N5911 2N5912 Process NJ30L or NJ36D
Static Electrical Characteristics Min Max Min Max Unit Test Conditions

Gate Source Breakdown Voltage V

(BR)GSS

– 25 – 25 V IG= – 1 µA, VDS= ØV

Gate Reverse Current I

GSS

– 100 – 100 pA VGS= – 15V, VDS= ØV
– 250 – 250 nA VGS= – 15V, VDS= ØV TA= 150°C

Gate Operating Current I

G

– 100 – 100 pA VDG= 10V, ID= 5 mA
– 100 – 100 nA VDG= 10V, ID= 5 mA TA= 125°C

Gate Source Cutoff Voltage V

GS(OFF)

– 1– 5– 1– 5 V VDS= 10V, ID= 1 nA

Gate Source Voltage V

GS

– 0.3 – 4 – 0.3 – 4 V VDS= 10V, ID= 5 mA

Drain Saturation Current (Pulsed) I

DSS

740740mAVDS= 10V, VGS= ØV

Dynamic Electrical Characteristics

Common Source

g

fs

5000 10000 5000 10000 µS VDG= 10V, ID= 5 mA f = 1 kHz

Forward Transconductance

5000 10000 5000 10000 µS VDG= 10V, ID= 5 mA f = 100 MHz

Common Source

g

os

100 100 µS VDG= 10V, ID= 5 mA f = 1 kHz

Output Conductance

150 150 µS VDG= 10V, ID= 5 mA f = 100 MHz

Common Source Input Capacitance C

iss

55pFV

DG

= 10V, ID= 5 mA f = 1 MHz

Common Source

C

rss

1.2 1.2 pF VDG= 10V, ID= 5 mA f = 1 MHz

Reverse Transfer Capacitance
Equivalent Short Circuit Input Noise Voltage ¯e

N

20 20 nV/√Hz VDG= 10V, ID= 5 mA f = 10 kHz

Noise Figure NF 1 1 dB

V

DG

= 10V, ID= 5 mA

f = 10 kHz

RG= 100KΩ

Differential Gate Current IG1– I

G2

20 20 nA VDG= 10V, ID= 5 mA TA= 125°C

Saturation Drain Current Ratio I

DSS1

/ I

DSS2

0.95 1 0.95 1 VDG= 20V, VGS= ØV

Differential Gate Source Voltage | V

GS1

– V

GS2

| 10 15 mV V

DG

= 10V, ID= 5 mA

TA= 25°C,

Gate Source Voltage

∆V

GS1

– V

GS2

20 40 mV VDG= 10V, ID= 5 mA

TB= 125°C

Differential Drift

∆T

TA= – 55°C,

20 40 mV VDG= 10V, ID= 5 mA

TB= 25°C

Transconductance Ratio g

fs1

/ g

fs2

0.9 1 0.85 1 VDG= 10V, ID= 5 mA f = 1 kHz

¥ Wideband Differential

Amplifiers

1000 N. Shiloh Road, Garland, TX 75042
[phone] FAX [phone]

www.interfet.com

Databook.fxp 1/14/99 11:31 AM Page B-23