IFET 2N5486, 2N5485, 2N5484 Datasheet

B-22 01/99

2N5484, 2N5485, 2N5486

N-Channel Silicon Junction Field-Effect Transistor

¥ VHF/UHF Amplifiers

Absolute maximum ratings at TA= 25¡C

Reverse Gate Source Voltage – 25 V
Reverse Gate Drain Voltage – 25 V
Continuous Device Power Dissipation 360 mW
Power Derating 3.27 mW/°C

TOÐ226AA Package

Dimensions in Inches (mm)

Pin Configuration

1 Drain, 2 Source, 3 Gate

Surface Mount

SMP5484, SMP5485, SMP5486

At 25°C free air temperature:

2N5484 2N5485 2N5486 Process NJ26

Static Electrical Characteristics

Min Max Min Max Min Max Unit Test Conditions

Gate Source Breakdown Voltage V

(BR)GSS

– 25 – 25 – 25 V IG= 1µA, VDS= ØV

Gate Reverse Current I

GSS

– 1– 1– 1nAV

GS

= – 20V, VDS= ØV

– 0.2 – 0.2 – 0.2 µA VGS= – 20V, VDS= ØV TA= 100°C

Gate Source Cutoff Voltage V

GS(OFF)

– 0.3 – 3 – 0.5 – 4 – 2 – 6 V VDS= 15V, ID= 10 nA

Drain Saturation Current (Pulsed) I

DSS

15410820mAVDS= 15V, VGS= ØV

Dynamic Electrical Characteristics

Forward Transconductance R

e(Yfs)

2500 µS VDS= 15V, VGS= ØV f = 100 MHz

3000 3500 µS VDS= 15V, VGS= ØV f = 400 MHz

Common Source Forward Transadmittance Y

fs

3000 6000 3500 7000 4000 8000 µS VDS= 15V, VGS= ØV f = 1 kHz

Input Admittance R

e(Yis)

100 µS VDS= 15V, VGS= ØV f = 100 MHz

1000 1000 µS VDS= 15V, VGS= ØV f = 400 MHz

Output Conductance R

e(Yos)

75 µS VDS= 15V, VGS= ØV f = 100 MHz

100 100 µS VDS= 15V, VGS= ØV f = 400 MHz

Common Source Output Admittance Y

os

50 60 75 µS VDS= 15V, VGS= ØV f = 1 MHz

Common Source Input Capacitance C

iss

555pFV

DS

= 15V, VGS= ØV f = 1 MHz

Common Source Reverse

C

rss

111pFV

DS

= 15V, VGS= ØV f = 1 MHz

Transfer Capacitance
Output Capacitance C

oss

222pFV

DS

= 15V, VGS= ØV f = 1 MHz

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Databook.fxp 1/13/99 2:09 PM Page B-22