IFET 2N5398, 2N5397 Datasheet

B-20 01/99

2N5397, 2N5398

N-Channel Silicon Junction Field-Effect Transistor

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Absolute maximum ratings at TA= 25¡C

Reverse Gate Source & Reverse Gate Drain Voltage – 25 V
Drain Source Voltage 25 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 300 mW
Power Derating 1.7 mW/°C

TOÐ72 Package

Dimensions in Inches (mm)

Pin Configuration

1 Source, 2 Drain, 3 Gate, 4 Case

Surface Mount

SMP5397, SMP5398

At 25°C free air temperature: 2N5397 2N5398 Process NJ26L
Static Electrical Characteristics Min Max Min Max Unit Test Conditions

Gate Source Breakdown Voltage V

(BR)GSS

– 25 – 25 V IG= – 1 µA, VDS= ØV

Gate Source Forward Voltage V

GS(F)

11VI

G

= 1 mA, VDS= ØV

Gate Reverse Current I

GSS

– 0.1 – 0.1 nA VGS= – 15V, VDS= ØV
– 0.1 – 0.1 µA VGS= – 15V, VDS= ØV TA= 150°C

Gate Source Cutoff Voltage V

GS(OFF)

– 1– 6– 1– 6 V VDS= 10V, ID= 1 nA

Drain Saturation Current (Pulsed) I

DSS

10 30 5 40 mA VDS= 10V, VGS= ØV

Dynamic Electrical Characteristics

Common Source

g

fs

5.5 9 5 10 mS VDG= 10V, ID= 10 mA f = 450 MHz

Forward Transconductance
Common Source

| Yfs| 6 10 5.5 10 mS VDS= 10V, ID= 10 mA f = 1 kHz

Forward Transfer Admittance
Common Source Output Conductance | gos| 0.4 0.5 mS VDG= 10V, ID= 10 mA f = 450 MHz

Common Source Input Admittance | Yos| 0.2 0.4 mS VDS= 10V, ID= 10 mA f = 1 kHz
Common Source Input Conductance g

is

23mSV

DG

= 10V, ID= 10 mA f = 450 MHz

Common Source Input Capacitance C

iss

5 5.5 pF VDG= 15V, VGS= ØV f = 1 kHz

Common Source

C

rss

1.2 1.3 pF VDG= 15V, VGS= ØV f = 1 kHz

Reverse Transfer Capacitance

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Databook.fxp 1/13/99 2:09 PM Page B-20