IFET 2N5116, 2N5115, 2N5114 Datasheet

01/99 B-19

2N5114, 2N5115, 2N5116

P-Channel Silicon Junction Field-Effect Transistor

¥ Analog Switches

At 25°C free air temperature:

Static Electrical Characteristics

Gate Source Breakdown Voltage V
Gate Reverse Current I
Gate Source Cutoff Voltage V

Gate Source Forward Voltage V
Drain Saturation Current (Pulsed) I

Drain Cutoff Current I

Drain Source ON Voltage V

Static Drain Source ON Resistance r

Dynamic Electrical Characteristics

Drain Source ON Resistance r
Common Source Input Capacitance C

Common Source Reverse
Transfer Capacitance

(BR)GSS

GSS

GS(OFF)
GS(F)

DSS

D(OFF)

DS(ON)

DS(ON)

ds(on)

iss

C

rss

Absolute maximum ratings at TA= 25¡C

Reverse Gate Source & Reverse Gate Drain Voltage – 40 V
Gate Current 50 mA
Continuous Device Power Dissipation 500mW
Power Derating 3 mW/°C
Storage Temperature Range – 65°C to + 200°C

2N5114 2N5115 2N5116 Process PJ99

Min Max Min Max Min Max Unit Test Conditions

30 30 30 V IG= – 1µA, VDS= ØV

500 500 500 pA VGS= 20V, VDS= ØV

111µAV

5103614VVDS= – 15V, IG= – 1 nA

– 1– 1– 1VV

– 30 – 90 mA VGS= ØV, VDS= – 18V

– 15 – 60 – 5 – 25 mA VGS= ØV, VDS= – 15V

– 500 pA VDS= – 15V, VGS= 12V

– 1 µA VDS= – 15V, VGS= 12V TA= 150°C

– 500 pA VDS= – 15V, VGS= 7V

– 1 µA VDS= – 15V, VGS= 7V TA= 150°C

– 500 pA VDS= – 15V, VGS= 5V

– 1 µA VDS= – 15V, VGS= 5V TA= 150°C

– 1.3 V VGS= ØV, ID= – 15 mA

– 0.8 V VGS= ØV, ID= – 7 mA

– 0.6 V VGS= ØV, ID= – 3 mA

75 100 150 Ω VGS= ØV, ID= – 1 mA

75 100 150 Ω VGS= ØV, ID= ØA f = 1 kHz
25 25 27 pF VDS=– 15V, VGS= ØV f = 1 MHz

7pFV

7pFV

7pF VDS= ØV, VGS= 5V f = 1 MHz

= 20V, VDS= ØV TA= 150°C

GS

= ØV, IG= – 1 mA

DS

= ØV, VGS= 12V f = 1 MHz

DS

= ØV, VGS= 7V f = 1 MHz

DS

Switching Characteristics 2N5114 2N5115 2N5116

Turn ON Delay Time t
Rise Time t
Turn OFF Delay Time t
Fall Time t

TOÐ18 Package

See Section G for Outline Dimensions

d(on)
r
d(off)
f

61025ns

10 20 35 ns

6820ns

15 30 60 ns

Pin Configuration

1 Source 1, 2 Gate & Case, 3 Drain

V

DD

V

GG

R

L

R

G

I

D(ON)

– 10 – 6 – 6 V

20 12 8 V
130 910 2000 Ω
100 220 390 Ω

– 15 – 7 – 3 mA

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