IFET 2N4869A, 2N4869, 2N4868A, 2N4868, 2N4867A Datasheet

01/99 B-17

2N4867, 2N4867A, 2N4868, 2N4868A, 2N4869, 2N4869A

N-Channel Silicon Junction Field-Effect Transistor

Absolute maximum ratings at TA= 25¡C

Reverse Gate Source & Reverse Gate Drain Voltage – 40 V
Gate Current 50 mA
Continuous Device Power Dissipation 300mW
Power Derating 1.7 mW/°C
Storage Temperature Range – 65°C to + 200°C

TOÐ72 Package

Dimensions in Inches (mm)

Pin Configuration

1 Source, 2 Drain, 3 Gate, 4 Case

Surface Mount

SMP4867, SMP4867A, SMP4868,
SMP4868A, SMP4869, SMP4869A

2N4867 2N4868 2N4869

At 25°C free air temperature:

2N4867A 2N4868A 2N4869A

Process NJ16

Static Electrical Characteristics

Min Max Min Max Min Max Unit Test Conditions

Gate Source Breakdown Voltage V

(BR)GSS

– 40 – 40 – 40 V IG= – 1µA, VDS= ØV

Gate Reverse Current I

GSS

– 0.25 – 0.25 – 0.25 nA VGS= – 30V, VDS= ØV
– 0.25 – 0.25 – 0.25 µA VGS= – 30V, VDS= ØV TA= 150°C

Gate Source Cutoff Voltage V

GS(OFF)

– 0.7 – 2 – 1 – 3 – 1.8 – 5 V VDS= 20V, ID= 1 µA

Drain Saturation Current (Pulsed) I

DSS

0.4 1.2 1 3 2.5 7.5 mA VDS= 20V, VGS= ØV

Dynamic Electrical Characteristics

Common Source Forward

g

fs

700 2000 1000 3000 1300 4000 µS VDS= 20V, VGS= ØV f = 1 kHz

Transconductance
Common Source Output Conductance g

os

1.5 4 10 µS VDS= 20V, VGS= ØV f = 1 kHz

Common Source Input Capacitance C

iss

25 25 25 pF VDS= 20V, VGS= ØV f = 1 MHz

Common Source Reverse

C

rss

555pFV

DS

= 20V, VGS= ØV f = 1 MHz

Transfer Capacitance
Equivalent Short Circuit

¯e

N

20 20 20 nV/√HZ VDS= 10V, VGS= ØV f = 10 Hz

Input Noise Voltage

10 10 10

nV/√HZ V

DS

= 10V, VGS= ØV f = 1 kHz

VDS= 10V, VGS= ØV f = 1 kHz

Noise Figure NF 1 1 1 dB

(2N4867, 68, 69) R

G

= 20 kΩ

(2N4867A, 68A, 69A) RG= 5 kΩ

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Databook.fxp 1/14/99 12:00 PM Page B-17