IFET 2N4857, 2N4856, 2N4861, 2N4860, 2N4859 Datasheet

01/99 B-15

2N4856, 2N4857, 2N4858, 2N4859, 2N4860, 2N4861

N-Channel Silicon Junction Field-Effect Transistor

Absolute maximum ratings at TA= 25¡C

2N4856, 2N4857, 2N4858 2N4859, 2N4860, 2N4861
Reverse Gate Source Voltage – 40 V – 30 V
Reverse Gate Drain Voltage – 40 V – 30 V
Continuous Device Dissipation 1.8 W 1.8 W
Power Derating 10 mW/°C 10 mW/°C
Continuous Forward Gate Current 50 mA 50 mA

TOÐ18 Package

See Section G for Outline Dimensions

Pin Configuration

1 Source, 2 Drain, 3 Gate &Case

Surface Mount

SMP4856, SMP4857, SMP4858,
SMP4859, SMP4860, SMP4861

2N4856 2N4857 2N4858

At 25°C free air temperature:

2N4859 2N4860 2N4861

Process NJ132

Static Electrical Characteristics

Min Max Min Max Min Max Unit Test Conditions

Gate Source Breakdown Voltage

2N4856, 2N4857, 2N4858 V

(BR)GSS

– 40 – 40 – 40 V IG= – 1µA, VDS= ØV

2N4859, 2N4860, 2N4861

– 30 – 30 – 30 V I

G

= – 1µA, VDS= ØV

Gate Reverse Current

I

GSS

– 250 – 250 – 250 pA VGS= – 20V, VDS= ØV

2N4856, 2N4857, 2N4858

– 500 – 500 – 500 nA V

GS

= – 20V, VDS= ØV TA= 150°C

Gate Reverse Current

I

GSS

– 250 – 250 – 250 pA VGS= – 15V, VDS= ØV

2N4859, 2N4860, 2N4861

– 500 – 500 – 500 nA V

GS

= – 15V, VDS= ØV TA= 150°C

Gate Source Cutoff Voltage V

GS(OFF)

– 4 – 10 – 2 – 6 – 0.8 – 4 V VDS= 15V, ID= 0.5 nA

Drain Saturation Current (Pulsed) I

DSS

50 20 100 8 80 mA VDS= 15V, VGS= ØV

Drain Cutoff Current

I

D(OFF)

250 250 250 pA VDS= 15V, VGS= – 10V
500 500 500 nA VDS= 15V, VGS= – 10V TA= 150°C

Drain Source ON Voltage

V

DS(ON)

0.75 0.5 0.5 V
V

GS

= ØV, ID= ( )

(20) (10) (5) (mA)

Dynamic Electrical Characteristics

Common Source ON Resistance r

ds(on)

25 40 60 Ω VGS= ØV, ID= ØA f = 1 kHz

Common Source Input Capacitance C

iss

18 18 18 pF VDS= ØV, VGS= – 10V f = 1 MHz

Common Source Reverse

C

rss

888pFV

DS

= ØV, VGS= – 10V f = 1 MHz

Transfer Capacitance

Switching Characteristics

6610ns

Turn ON Delay Time t

d(on)

(20) (10) (5) (mA)

[–10] [– 6] [– 4] [V]

V

DD

= 10V, VGS= ØV

3410ns

I

D(ON)

= ( )

Rise Time t

r

(20) (10) (5) (mA)

V

GS(OFF)

= [ ]

[–10] [– 6] [– 4] [V] (2N4856, 2N4859) RL= 465Ω

25 50 100 ns

(2N4857, 2N4860) R

L

= 953Ω

Turn OFF Delay Time t

d(off)

(20) (10) (5) (mA) (2N4858, 2N4861) RL= 1910Ω

[–10] [– 6] [– 4] [V]

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Databook.fxp 1/14/99 11:30 AM Page B-15