IFET 2N4341, 2N4340 Datasheet

B-12 01/99

2N4340, 2N4341

N-Channel Silicon Junction Field-Effect Transistor

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Absolute maximum ratings at TA= 25¡C

Reverse Gate Source & Reverse Gate Drain Voltage – 50 V
Continuous Forward Gate Current 50 mA
Continuous Device Power Dissipation 300 mW
Power Derating (to 175°C) 2mW/°C

TOÐ18 Package

Dimensions in Inches (mm)

Pin Configuration

1 Source, 2 Drain, 3 Gate & Case

Surface Mount

SMP4340, SMP4341

At 25°C free air temperature: 2N4340 2N4341 Process NJ16
Static Electrical Characteristics Min Max Min Max Unit Test Conditions

Gate Source Breakdown Voltage V

(BR)GSS

– 50 – 50 V IG= – 1 µA, VDS= ØV

Gate Reverse Current I

GSS

– 100 – 100 pA VGS= – 30V, VDS= ØV
– 100 – 100 nA VGS= – 30V, VDS= ØV TA= 150°C

Gate Source Cutoff Voltage V

GS(OFF)

– 1– 3– 2– 6 V VDS= 15V, ID= 0.1 µA

Drain Saturation Current (Pulsed) I

DSS

1.2 3.6 3 9 mA VDS= 15V, VGS= ØV

Drain Cutoff Current I

D(OFF)

0.05 0.07 nA
VDS= 15V, VGS= ( )

(– 5) (– 10) V

Dynamic Electrical Characteristics

Drain Source ON Resistance r

ds(on)

1500 800 Ω VGS= ØV, ID= ØA f = 1 kHz

Common Source

g

fs

1300 3000 2000 4000 µS VDS= 15V, VGS= ØV f = 1 kHz

Forward Transconductance
Common Source Output Conductance g

os

30 60 µS VDS= 15V, VGS= ØV f = 1 kHz

Common Source Input Capacitance C

iss

77pFV

DS

= 15V, VGS= ØV f = 1 MHz

Common Source

C

rss

33pFV

DS

= 15V, VGS= ØV f = 1 MHz

Reverse Transfer Capacitance

Noise Figure NF 1 1 dB

VDS= 15V, VGS= ØV

f = 1 kHz

RG= 1MΩ, BW = 200 Hz

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Databook.fxp 1/13/99 2:09 PM Page B-12