IFET 2N4339, 2N4338 Datasheet

01/99 B-11

2N4338, 2N4339

N-Channel Silicon Junction Field-Effect Transistor

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At 25°C free air temperature: 2N4339 2N4339 Process NJ16
Static Electrical Characteristics Min Max Min Max Unit Test Conditions

Gate Source Breakdown Voltage V

Gate Reverse Current I
Gate Source Cutoff Voltage V

Drain Saturation Current (Pulsed) I

Drain Cutoff Current I

Dynamic Electrical Characteristics

Drain Source ON Resistance r
Common Source

Forward Transconductance

(BR)GSS

GSS

GS(OFF)

DSS

D(OFF)

ds(on)

g

fs

Absolute maximum ratings at TA= 25¡C

Reverse Gate Source & Reverse Gate Drain Voltage – 50 V
Continuous Forward Gate Current 50 mA
Continuous Device Power Dissipation 300 mW
Power Derating (to 175°C) 2mW/°C

– 50 – 50 V IG= – 1 µA, VDS= ØV

– 100 – 100 pA VGS= – 30V, VDS= ØV
– 100 – 100 nA VGS= – 30V, VDS= ØV TA= 150°C

– 0.3 – 1 – 0.6 – 1.8 V VDS= 15V, ID= 0.1 µA

0.2 0.6 0.5 1.5 mA VDS= 15V, VGS= ØV

0.05 0.05 nA

(– 5) (– 5) V

2500 1700 Ω VGS= ØV, ID= ØA f = 1 kHz

600 1800 800 2400 µS VDS= 15V, VGS= ØV f = 1 kHz

VDS= 15V, VGS= ( )

Common Source Output Conductance g
Common Source Input Capacitance C

Common Source
Reverse Transfer Capacitance

Noise Figure NF 1 1 dB

TOÐ18 Package

Dimensions in Inches (mm)

os
iss

C

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Pin Configuration

1 Source, 2 Drain, 3 Gate & Case

515µSV
77pFV

33pFV

= 15V, VGS= ØV f = 1 kHz

DS

= 15V, VGS= ØV f = 1 MHz

DS

= 15V, VGS= ØV f = 1 MHz

DS

VDS= 15V, VGS= ØV
RG= 1MΩ, BW = 200 Hz

f = 1 kHz

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