IFET 2N4222A, 2N4222, 2N4221A, 2N4221, 2N4220A Datasheet

B-10 01/99

2N4220, 2N4220A, 2N4221, 2N4221A, 2N4222, 2N4222A

N-Channel Silicon Junction Field-Effect Transistor

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At 25°C free air temperature:

Static Electrical Characteristics

Gate Source Breakdown Voltage V
Gate Reverse Current I

Gate Source Voltage
Gate Source Cutoff Voltage V

Drain Saturation Current (Pulsed) I

Dynamic Electrical Characteristics

Common Source Forward
Transconductance

Common Source Forward Transmittance |Yfs| 750 750 750 µS VDS= 15V, VGS= ØV f = 100 MHz
Common Source Output Conductance g
Common Source Input Capacitance C

Common Source Reverse
Transfer Capacitance

Noise Figure

2N4220A, 2N4221A, 2N4222A RG= 1 MΩ

(BR)GSS

GSS

V

GS

GS(OFF)

DSS

g

fs

os

iss

C

rss

NF 2.5 2.5 2.5 dB

Min Max Min Max Min Max Unit Test Conditions

– 30 – 30 – 30 V IG= – 1µA, VDS= ØV

– 0.5 – 2.5 – 1 – 5 – 2 – 6 V

(50) (50) (200) (200) (500) (500) µA

0.5326515mAVDS= 15V, VGS= ØV

1000 4000 2000 5000 2500 6000 µS VDS= 15V, VGS= ØV f = 1 kHz

Absolute maximum ratings at TA= 25¡C

Reverse Gate Source & Reverse Gate Drain Voltage – 30 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 300 mW
Power Derating (to 150 °C) 2 mW/°C

2N4220 2N4221 2N4222

2N4220A 2N4221A 2N4222A

NJ16 NJ16 NJ32 Process

– 0.1 – 0.1 – 0.1 nA VGS= – 15V, VDS= ØV
– 0.1 – 0.1 – 0.1 µA VGS= – 15V, VDS= ØV TA= 150°C

= 15V, ID= ( )

V

DS

– 4– 6– 8VV

10 20 40 µS VDS= 15V, VGS= ØV f = 1 kHz

666pFV
222pFV

= 15V, ID= 0.1 nA

DS

= 15V, VGS= ØV f = 1 MHz

DS

= 15V, VGS= ØV f = 1 MHz

DS

= 15V, VGS= ØV

V

DS

f = 100 MHz

1000 N. Shiloh Road, Garland, TX 75042
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TOÐ72 Package

Dimensions in Inches (mm)

Pin Configuration

1 Source, 2 Drain, 3 Gate, 4 Case

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