IFET 2N4117A, 2N4117, 2N4119A, 2N4119, 2N4118A Datasheet

01/99 B-9

2N4117, 2N4117A, 2N4118, 2N4118A, 2N4119, 2N4119A

N-Channel Silicon Junction Field-Effect Transistor

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Amplifiers

At 25°C free air temperature:

Static Electrical Characteristics

Gate Source Breakdown Voltage V
Gate Reverse Current

2N4117, 2N4118, 2N4119 I
2N4117A, 2N4118A, 2N4119A

Gate Source Cutoff Voltage V
Drain Saturation Current (Pulsed)

2N4117, 2N4118, 2N4119 I
2N4117A, 2N4118A, 2N4119A

Dynamic Electrical Characteristics

Common Source Forward
Transconductance

Common Source Output Conductance g
Common Source Input Capacitance C

Common Source Reverse
Transfer Capacitance

(BR)GSS

GSS

GS(OFF)

GSS

g

fs

os

iss

C

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Absolute maximum ratings at TA= 25¡C

Reverse Gate Source & Reverse Gate Drain Voltage – 40 V
Continuous Forward Gate Current 50 mA
Continuous Device Power Dissipation 300 mW
Power Derating (to 175°C) 2 mW/°C

2N4117 2N4118 2N4119

2N4117A 2N4118A 2N4119A

Min Max Min Max Min Max Unit Test Conditions

– 40 – 40 – 40 V IG= – 1µA, VDS= ØV

– 10 – 10 – 10 pA VGS= – 20V, VDS= ØV

– 1– 1– 1pAV

– 0.6 – 1.8 – 1 – 3 – 2 – 6 V VDS= 10V, ID= 1 nA

0.03 0.09 0.08 0.24 0.2 0.6 mA VDS= 10V, VGS= ØV

0.015 0.09 0.08 0.24 0.2 0.6 mA V

70 210 80 250 100 330 µS VDS= 10V, VGS= ØV f = 1 kHz

3 5 10 µS VDS= 10V, VGS= ØV f = 1 kHz
333pFV

1.5 1.5 1.5 pF VDS= 10V, VGS= ØV f = 1 MHz

Process NJ01

= – 20V, VDS= ØV

GS

= 10V, VGS= ØV

DS

= 10V, VGS= ØV f = 1 MHz

DS

TOÐ72 Package

Dimensions in Inches (mm)

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Pin Configuration

1 Source, 2 Drain, 3 Gate, 4 Case

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