IFET 2N3994A, 2N3994 Datasheet

B-8 01/99

2N3994, 2N3994A

P-Channel Silicon Junction Field-Effect Transistor

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At 25°C free air temperature: 2N3994 2N3994A Process PJ99
Static Electrical Characteristics Min Max Min Max Unit Test Conditions

Gate Source Breakdown Voltage V
Gate Source Cutoff Voltage V
Drain Saturation Current (Pulsed) I

Drain Reverse Current I

Drain Cutoff Current I

Dynamic Electrical Characteristics

Drain Source ON Resistance r
Common Source

Forward Transmittance

(BR)GSS
GS(OFF)

DSS

DGO

D(OFF)

ds(on)

| Y

| 410510mSVDS= – 10V, VGS= ØV f = 1 kHz

fs

Absolute maximum ratings at TA= 25¡C

Reverse Gate Source Voltage 25 V
Reverse Gate Drain Voltage 25 V
Continuous Forward Gate Current – 10 mA
Continuous Device Power Dissipation 300 mW
Power Derating 2.4 mW/°C

25 25 V IG= 1 µA, VDS= ØV

1 5.5 1 5.5 V VDS= – 10V, ID= – 1 µA

– 2 – 2 mA VDS= – 10V, VGS= ØV

– 1.2 – 1.2 nA VDG= – 15V, IS= ØA
– 1.2 – 1.2 µA VDG= – 15V, IS= ØA TA= 150°C
– 1.2 – 1.2 nA VDS= – 10V, VGS= 10V

– 1 – 1 µA VDS= – 10V, VGS= 10V TA= 150°C

300 300 Ω VGS= ØV, ID= ØA f = 1 kHz

Common Source Input Capacitance C
Common Source

Reverse Transfer Capacitance

iss

C

rss

16 12 pF VDS= – 10V, VGS= ØV f = 1 MHz

5 3.5 pF VDS= Ø, VGS= 10V f = 1 MHz

TOÐ72 Package

Dimensions in Inches (mm)

Pin Configuration

1 Source, 2 Gate, 3 Drain, 4 Case

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