IFET 2N3956, 2N3955, 2N3954 Datasheet

01/99 B-5

2N3954, 2N3955, 2N3956

N-Channel Dual Silicon Junction Field-Effect Transistor

¥ Low and Medium Frequency

Differential Amplifiers

¥ High Input Impedance

Amplifiers

At 25°C free air temperature:

Static Electrical Characteristics

Gate Source Breakdown Voltage V
Gate Reverse Current I

Gate Operating Current I

Gate Source Voltage V
Gate Source Cutoff Voltage V

Gate Source Forward Voltage V
Drain Saturation Current (Pulsed) I

Dynamic Electrical Characteristics

Common Source Forward
Transconductance

Common Source Output Capacitance g
Common Source Input Capacitance C
Drain Gate Capacitance C

Common Source Reverse
Transfer Capacitance

(BR)GSS

GSS

G

GS

GS(OFF)
GS(F)

DSS

g

fs

os

iss
dgo

C

rss

Absolute maximum ratings at TA= 25¡C

Reverse Gate Source & Reverse Gate Drain Voltage – 50 V
Gate Current 50 mA
Total Device Power Dissipation (each side) 250 mW
@ 85°C Case Temperature (both sides) 500 mW
Power Derating (both sides) 4.3 mW/°C

2N3954 2N3955 2N3956 Process NJ16

Min Max Min Max Min Max Unit Test Conditions

– 50 – 50 – 50 V IG= – 1µA, VDS= ØV

– 100 – 100 – 100 pA VGS= – 30V, VDS= ØV
– 500 – 500 – 500 nA VGS= – 30V, VDS= ØV TA= 125°C

– 50 – 50 – 50 pA VDS= 20V, ID= 200 µA

– 250 – 250 – 250 nA VDS= 20V, ID= 200 µA TA= 125°C

– 4.2 – 4.2 – 4.2 V VDS= 20V, ID= 50 µA

– 0.5 – 4 – 0.5 – 4 – 0.5 – 4 V VDS= 20V, ID= 200 µA

– 1 – 4.5 – 1 – 4.5 – 1 – 4.5 V VDS= – 20V, IG= 1 nA

222VV

0.5 5 0.5 5 0.5 5 mA VDS= 20V, VGS= ØV

1000 3000 1000 3000 1000 3000 µS VDS= 20V, VGS= ØV f = 1 kHz
1000 1000 1000 µS V

35 35 35 µS VDS= 20V, VGS= ØV f = 1 kHz

444pFV

1.5 1.5 1.5 pF Vdg= 10V, IS= ØA f = 1 MHz

1.2 1.2 1.2 pF VDS= 20V, VGS= ØV f = 1 MHz

= ØV, IG= 1 mA

DS

= 20V, VGS= ØV f = 200 MHz

DS

= 20V, VGS= ØV f = 1 MHz

DS

Noise Figure NF 0.5 0.5 0.5 dB
Differential Gate Current | I

Saturation Drain Current Ratio I
Differential Gate Source Voltage |V

Differential Gate Source Voltage
with Temperature

Transconductance Ratio g

TOÐ71 Package

See Section G for Outline Dimensions

– I

G1

DSS1/IDSS2

GS1–VGS2

∆V

GS1–VGS2

fs1/gfs2

|101010nAV

G2

0.95 1 0.95 1 0.95 1 VDS= 20V, VGS= ØV

| 51015mVV

0.8 2 4 mV/°C VDS= 20V, ID= 200µA

∆T

0.97 1 0.97 1 0.97 1 VDS= 20V, ID= 200µA f = 1 kHz

Pin Configuration

1 Source, 2 Drain, 3 Gate,

1 2.5 5 mV/°C VDS= 20V, ID= 200µA

5 Source, 6 Drain, 7 Gate

www.interfet.com

VDS= 20V, VGS= ØV,
Rg= 10MΩ

= 20V, ID= 200µA TA= 125°C

DS

= 20V, ID= 200µA

DS

f = 100 Hz

= 25°C

T

A

to = – 55°C
TA= 25°C
to = +125°C

1000 N. Shiloh Road, Garland, TX 75042
[phone] FAX [phone]