IFET 2N3822, 2N3821 Datasheet

01/99 B-3

2N3821, 2N3822

N-Channel Silicon Junction Field-Effect Transistor

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At 25°C free air temperature: 2N3821 2N3822 Process NJ32
Static Electrical Characteristics Min Max Min Max Unit Test Conditions

Gate Source Breakdown Voltage V

Gate Reverse Current I

Gate Source Voltage V

Gate Source Cutoff Voltage V
Drain Saturation Current (Pulsed) I

Drain Cutoff Current I

(BR)GSS

GSS

GS

GS(OFF)

DSS

D(OFF)

Absolute maximum ratings at TA= 25¡C

Reverse Gate Source & Reverse Gate Drain Voltage – 50 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 300 mW
Power Derating 2mW/°C

– 50 – 50 V IG= – 1 µA, VDS= ØV

– 0.1 – 0.1 nA VGS= – 30V, VDS= ØV
– 0.1 – 0.1 µA VGS= – 30V, VDS= ØV TA= 150°C

– 0.5 – 2 V VDS= 15V, ID= 50 µA

– 1 – 4 V VDS= 15V, ID= 200 µA

VVDS= 15V, ID= 400 µA

– 4 – 6 V VDS= 15V, ID= 0.5 nA

0.5 2.5 2 10 mA VDS= 15V, VGS= ØV
nA VDS= 15V, VGS= – 8V
µA VDS= 15V, VGS= – 8V TA= 150°C

Dynamic Electrical Characteristics

Drain Source ON Resistance r
Common Source

Forward Transconductance
Common Source

Forward Transmittance
Common Source Output Conductance g

Common Source Input Capacitance C
Common Source

Reverse Transfer Capacitance
Equivalent Short Circuit

Input Noise Voltage

Noise Figure NF 5 5 dB

TOÐ72 Package

Dimensions in Inches (mm)

ds(on)

g

| Y

C

¯e

fs

fs

os
iss

rss

N

1500 4500 3000 6500 µS VDS= 15V, VGS= ØV f = 1 kHz

| 1500 3000 µS VDS= 15V, VGS= ØV f = 100 MHz

10 20 µS VDS= 15V, VGS= ØV f = 1 kHz

66pFV
22pFV

200 200 nV/√Hz VDS= 15V, VGS= ØV f = 10 Hz

Pin Configuration

1 Source, 2 Drain, 3 Gate, 4 Case

Ω VGS= ØV, ID= ØV f = 1 kHz

= 15V, VGS= ØV f = 1 MHz

DS

= 15V, VGS= ØV f = 1 MHz

DS

VDS= 15V, VGS= ØV
RG= 1MΩ

f = 10 Hz

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