Integrated Device Technology Inc IDTQS3125S1, IDTQS3125Q Datasheet
IDTQS3125
HIGH-SPEED CMOS QUADRUPLE BUS SWITCH WITH INDIVIDUAL ENABLES
®
QUICKSWITCH
PRODUCTS
HIGH-SPEED CMOS
QUADRUPLE BUS SWITCH WITH
INDIVIDUAL ACTIVE LOW ENABLES
INDUSTRIAL TEMPERATURE RANGE
IDTQS3125
FEA TURES:
• Enhanced N channel FET with no inherent diode to Vcc
• Pin compatible with the 74’125 function
• Zero propagation delay, zero added ground bounce
• Undershoot clamp diodes on all switch and control inputs
• Available in QSOP and SOIC packages
APPLICA TIONS:
• Hot-swapping, hot-docking
• Voltage translation (5V to 3.3V)
• Power conservation
• Capacitance reduction and isolation (mass storage, work
stations)
• Logic replacement (data processing)
• Clock gating
• Bus isolation
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION:
The QS3125 provides a set of four high-speed low resistance CMOS
switches connecting inputs to outputs without propagation delay and without
generating additional ground bounce noise. Individual enables (OE) are
used to turn on the switches. The QS3125 is ideal for signal and control
switching since the device adds no noise, ground bounce, propagation
delay, or significant power consumption to the system. The QS3125 can also
be used for analog switching applications such as video.
QuickSwitch devices provide an order of magnitude faster speed than
conventional logic devices.
The QS3125 is characterized for operation at -40°C to +85°C.
1O E
2O E
3O E
4O E
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
INDUSTRIAL TEMPERATURE RANGE
1999 Integrated Device Technology, Inc. DSC-5598/1c
1A
2A 3A 4A
1Y 2Y 3Y 4Y
DECEMBER 1999
1
IDTQS3125
HIGH-SPEED CMOS QUADRUPLE BUS SWITCH WITH INDIVIDUAL ENABLES
INDUSTRIAL TEMPERATURE RANGE
PIN CONFIGURATION
NC
1OE
A
1
1Y
2OE
2
A
2Y
GND
1
2
3
4
5
6
7
8
QSOP
TOP VIEW
16
15
14
13
12
11
10
9
V
CC
4OE
4
A
4Y
3OE
A
3
3Y
NC
ABSOLUTE MAXIMUM RATINGS
Symbol Description Max Unit
(2)
VTERM
VTERM
VTERM
VAC AC Input Voltage (pulse width ≤20ns) – 3 V
IOUT DC Output Current 120 mA
PMAX Maximum Power Dissipation (TA = 85°C) 0.5 W
T
STG Storage Temperature –65 to +150 °C
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. VCC terminals.
3. All terminals except VCC .
Supply Voltage to Ground –0.5 to +7 V
(3)
DC Switch Voltage VS –0.5 to +7 V
(3)
DC Input Voltage VIN –0.5 to +7 V
(1)
CAPACITANCE (TA = +25°C, f = 1MHz, VIN = 0V , VOUT = 0V)
Pins Typ. Max.
OE (Inputs) 3 5 pF
Quickswitch Channels (Switch OFF) 5 7 pF
(1)
Unit
1OE
1
1Y
2OE
A
2
2Y
GND
NOTE:
1. This parameter is guaranteed but not production tested.
PIN DESCRIPTION
Pin Names I/ O Description
1
A
2
3
4
5
6
14
13
12
11
10
9
78
SOIC
TOP VIEW
V
CC
4OE
A
4
4Y
3OE
A
3
3Y
1A - 4A I/ O Bus A
1Y - 4Y I/ O Bus Y
1OE - 4OE I Bus Switch Enable
FUNCTION TABLE
xOE xA xY Function
L H H Connect
L L L Connect
H X X Disconnect
NOTE:
1. H = HIGH Voltage Level
L = LOW Voltage Level
X = Don't Care
(1)
2
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