IDT54/74FCT623T/AT/CT
FAST CMOS OCTAL BUS TRANSCEIVERS (3-STATE)
FAST CMOS OCTAL
BUS TRANSCEIVERS
(3-STATE)
Integrated Device Technology, Inc.
IDT54/74FCT623T/AT/CT
FEATURES:
• Std., A and C speed grades
• Low input and output leakage ≤1µA (max.)
• CMOS power levels
• True TTL input and output compatibility
– VOH = 3.3V (typ.)
– VOL = 0.3V (typ.)
• High drive outputs (-15mA IOH, 64mA IOL)
• Power off disable outputs permit “live insertion”
• Meets or exceeds JEDEC standard 18 specifications
• Product available in Radiation Tolerant and Radiation
Enhanced versions
• Military product compliant to MIL-STD-883, Class B
and DESC listed (dual marked)
• Available in DIP, SOIC, CERPACK and LCC packages
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION
The FCT623T/AT/CT is a non-inverting octal transceiver
with 3-state bus-driving outputs in both the send and receive
directions. The B bus outputs are capable of sinking 64mA and
sourcing up to 15mA, providing very good capacitive drive
characteristics.
These octal bus transceivers are designed for asynchronous two-way communication between data buses. The control
function implementation allows for maximum flexibility in
timing.
One important feature of the FCT623T/AT/CT is the Power
Down Disable capability. When the GAB and GBA inputs are
conditioned to put the device in high-Z state, the I/O ports will
maintain high impedance during power supply ramps and
when V
applications where it may be necessary to perform “live”
insertion and removal of cards for on-line maintenance. It is
also a benefit in systems with multiple redundancy where one
or more redundant cards may be powered-off.
CC = 0V. This is a desirable feature in back-plane
GBA
GAB
A1
A2 - A8
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
B1
B2 - B8
7 other transceivers
2563 drw 01
MILITARY AND COMMERCIAL TEMPERATURE RANGES NOVEMBER 1995
1996 Integrated Device Technology, Inc. 6.19 DSC-2563/5
6.19 1
1
IDT54/74FCT623T/AT/CT
FAST CMOS OCTAL BUS TRANSCEIVERS (3-STATE)
PIN CONFIGURATIONS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
GAB
A
A2
A3
A4
A5
A6
A7
A8
GND
1
2
3
4
P20-1
D20-1
5
SO20-2
6
&
7
E20-1
8
9
10 11
DIP/SOIC/CERPACK
20
19
18
17
16
15
14
13
12
VCC1
GBA
B
1
B2
B3
B4
B5
B6
B7
B8
2563 drw 02
TOP VIEW
DEFINITION OF FUNCTIONAL TERMS
Pin Names Description
G
BA, GAB Enable Inputs
A1 - A8 A Bus Inputs or 3-State Outputs
B1 - B8 B Bus Inputs or 3-State Outputs
2563 tbl 01
FUNCTION TABLE
Enable Inputs
GGBA GAB
L L B data to A bus
H H A data to B bus
HL Z
L H B data to A bus
NOTES: 2563 tbl 02
1. H = HIGH Voltage Level
2. L = LOW Volage Level
3. Z = High-Impedance (OFF) state
(1)
Outputs
A data to B bus
INDEX
A3
A4
A5
A6
A7
A2
3 2 20 19
4
5
6
7
8
A1
1
L20-2
GAB
CC
V
GBA
18
17
16
15
14
B1
B2
B3
B4
B5
9 10111213
8
8
GND
B7
B
B6
2563 drw 03
A
LCC
TOP VIEW
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Rating Commercial Military Unit
(2)
VTERM
Terminal Voltage
–0.5 to +7.0 –0.5 to +7.0 V
with Respect to
GND
(3)
VTERM
TA Operating
Terminal Voltage
with Respect to
GND
–0.5 to
V
CC +0.5
–0.5 to
VCC +0.5
0 to +70 –55 to +125 °C
V
Temperature
TBIAS Temperature
–55 to +125 –65 to +135 °C
Under Bias
TSTG Storage
–55 to +125 –65 to +150 °C
Temperature
PT Power Dissipation 0.5 0.5 W
IOUT DC Output
–60 to +120 –60 to +120 mA
Current
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability. No terminal voltage may exceed
V
CC by +0.5V unless otherwise noted.
2. Input and V
3. Outputs and I/O terminals only.
CC terminals only.
2563 lnk 03
CAPACITANCE (TA = +25°C, f = 1.0MHz)
Symbol Parameter
CIN Input
Capacitance
COUT Output
Capacitance
NOTE:
1. This parameter is measured at characterization but not tested.
6.19 2
(1)
Conditions Typ. Max. Unit
VIN = 0V 6 10 pF
VOUT = 0V 8 12 pF
2563 lnk 04